BFP420F ,RF-Bipolar
BFP420F
RF-Bipolar
SIEGET-
25BFP420F
NPN Silicon RF Transistor
Preliminary data For high gain low noise amplifiers Smallest Package 1.4 x 0.8 x 0.59mm Noise figure F = 1.1 dB at 1.8 GHz
outstanding Gma = 20 dB at 1.8 GHz Transition frequency fT = 25 GHz Gold metallization for high reliability SIEGET
25 GHz fT - Line
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ESD: Electrostatic discharge sensitive device, observe handling precaution!
Maximum Ratings
Thermal ResistanceTS is measured on the emitter lead at the soldering point to the pcbFor calculation of RthJA please refer to Application Note Thermal Resistance
SIEGET-
25BFP420F
Electrical Characteristics at TA = 25°C, unless otherwise specified.
DC characteristics
AC characteristics (verified by random sampling)Gma = |S21 / S12| (k-(k2-1)1/2)IP3 value depends on termination of all intermodulation frequency components. Termination used for this
SIEGET-
25BFP420F
SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) :
Transistor Chip Data
C'-E'-Diode Data (Berkley-SPICE 2G.6 Syntax) :All parameters are ready to use, no scaling is necessary
Package Equivalent Circuit:BI = 0.42nHLBI =0.15-EI = 0.26nHLEI =0.11-CI = 0.35nHLCI =0.13-
KCI-EI =-0.05-
KBI-CI =-0.08-
KBI-EI =0.20-BO = 0.22nHEO = 0.28nHCO = 0.22nH
KBO-EO =0.10-
KBO-CO =0.01-
KEO-CO =0.11-BE = 34fFBC =2fFCE = 33fF
Valid up to 6GHz
The TSFP-4 package has two emitter leads. To avoid high complexity of the package equivalent circuit,
both leads are combined in one electrical connection. LxI are series resistors for the inductances LxI and Kxa-yb are the coupling coefficients between
the inductances Lxa and Lyb. The referencepins for the coupled ports are B, E, C, B`, E`, C`.
For examples and ready to use parameters please contact your local Infineon Technologies
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25BFP420F
For non-linear simulation: Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators. If you need simulation of the reverse characteristics, add the diode with the
C'-E'- diode data between collector and emitter. Simulation of package is not necessary for frequencies < 100MHz.
For higher frequencies add the wiring of package equivalent circuit around the
non-linear transistor and diode model.
Note: This transistor is constructed in a common emitter configuration. This feature causes
an additional reverse biased diode between emitter and collector, which does not
effect normal operation.
EHA07307
Transistor Schematic DiagramThe common emitter configuration shows the following advantages: Higher gain because of lower emitter inductance. Power is dissipated via the grounded emitter leads, because the chip is mounted
on copper emitter leadframe.
Please note, that the broadest lead is the emitter lead.
:
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