BFP23 ,PNP Silicon Transistors (High breakdown voltage Low collector-emitter saturation voltage)
BFP23
PNP Silicon Transistor with high Reve...
SIEMENS
PNP Silicon Transistors BFP 23
with High Reverse Voltage BFP 26
o High breakdown voltage
0 Low collector-emitter saturation voltage
0 Low capacitance
o Complementary types: BFP 22, BFP 25 (NPN) Cfiiu,,
Type Marking Ordering Code Pin Configuration Package')
(tape and reel) 1 2 3
BFP 23 - Q62702-F622 E B C TO-92
BFP 26 Q62702-F722
Maximum Ratings
Parameter Symbol Values Unit
BFP 23 BFP 26
Collector-emitter voltage cho 200 300 V
Collector-base voltage Vcao 200 300
Emitter-base voltage VEBO 6
Collector current Ic 200 mA
Peak collector current low: 500
Base current [a 100
Peak base current IBM 200
Total power dissipation, To = 66 ( Ptot 625 mW
Junction temperature T; 150 (
Storage temperature range Tstg - 65 ... + 150
Thermal Resistance
Junction - ambient RthJA s 200 KNV
Junction - case2) Rmoc s 135
1) For detailed information see chapter Package Outlines.
2) Mounted on Al heat sink 15 mm x 25 mm x 0.5 mm.
BFP 23
BFP 26
Electrical Characteristics
at TA = 25 T, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
DC characteristics
Collector-emitter breakdown voltage V(BR)CEO V
Ic = 1 mA BFP 23 200 - -
BFP 26 300 - -
Collector-base breakdown voltage V(BR)CBO
[c = 100 “A BFP 23 200 - -
BFP 26 300 - -
Emitter-base breakdown voltage V(BR)EBO 6 - -
hs = 100 uA
Collector-base cutoff current Icao
Vca = 160 V BFP 23 - - 100 nA
Vca = 250 V BFP 26 - - 100 nA
Vca = 160 V, TA = 150°C BFP 23 - - 20 PA
Vca = 250 V, TA = 150 ( BFP 26 - - 20 “A
Emitter-base cutoff current IEBO - - 100 nA
VEB = 3 V
DC current gain hFE -
Ic=1mA,VCE=1OV 25 - -
Ic=10mA,VCE=10V1) 40 - -
fc = 30 mA, ch = 10 V1) BFP 23 30 - -
BF P 26 25 - -
Collector-emitter saturation voltage” VCEsat V
fc = 20 mA, h, = 2 mA BFP 23 - - 0.4
BFP 26 - - 0.5
Base-emitter saturation voltage') VBEsat - - 0.9
Ic=20A,ha=2mA
AC characteristics
Transition frequency f - 70 - MHz
Ic = 20 mA, Veg: 10 V,f= 20 MHz
Output capacitance Coho - 1.5 - pF
Vca=30V,f=1MHz
1) Pulse test conditions: ts 300 us, D s 2 %.
