BFP196W ,RF-BipolarcharacteristicsCollector-emitter breakdown voltage 12 - - VV(BR)CEOI = 1 mA, I = 0 C BCollector-emi ..
BFP23 ,PNP Silicon Transistors (High breakdown voltage Low collector-emitter saturation voltage)
BFP196W
RF-Bipolar
BFP196W
NPN Silicon RF Transistor For low noise, low distortion broadband
amplifiers in antenna and telecommunications
systems up to 1.5 GHz at collector currents from
20 mA to 89 mA Power amplifier for DECT and PCN systems fT = 7.5 GHz
F = 1.5 dB at 900 MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Maximum Ratings
Thermal ResistanceTS is measured on the collector lead at the soldering point to the pcbFor calculation of RthJA please refer to Application Note Thermal Resistance
BFP196W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
DC characteristics
BFP196W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
AC characteristics (verified by random sampling)
BFP196W
SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) :
Transistor Chip DataAll parameters are ready to use, no scalling is necessary.
Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil-und Satellitentechnik (IMST)
Package Equivalent Circuit:
BFP196W
Total power dissipation Ptot = f (TS)
100
200
300
400
500
600
800
tot
Permissible Pulse Load RthJS = f (tp)
10 0 10 10 10 10
thJS
Permissible Pulse Loadtotmax/PtotDC = f (tp) 0 10 10 10
tot
ax
/ P
totDC
BFP196W
Collector-base capacitance Ccb = f (VCB)
f = 1MHz
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
2.0
Transition frequency fT = f (IC) CE = Parameter
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
7.5
Power Gain Gma, Gms = f(IC)
f = 0.9GHz CE = Parameter
10
11
12
13
14
15
16
17
18
20
Power Gain Gma, Gms = f(IC)
f = 1.8GHz CE = Parameter
10
12
