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Partno	Mfg	Dc	Qty	Available	Descript
BFP193T	VISHAY	N/a	481	avai	Silicon NPN Planar RF Transistor

BFP193T ,Silicon NPN Planar RF Transistor Document Number 850154 (5) Rev. 1, 20-Jan-99BFP193T/BFP193TW/BFP193TRWVishay SemiconductorsOzone D ..
BFP196 ,RF-BipolarcharacteristicsCollector-emitter breakdown voltage 12 - - VV(BR)CEOI = 1 mA, I = 0 C BCollector-emi ..
BFP196W ,RF-BipolarcharacteristicsCollector-emitter breakdown voltage 12 - - VV(BR)CEOI = 1 mA, I = 0 C BCollector-emi ..
BFP23 ,PNP Silicon Transistors (High breakdown voltage Low collector-emitter saturation voltage)

BFP193T
Silicon NPN Planar RF Transistor
BFP193T/BFP193TW/BFP193TRW
Vishay Semiconductors
www.vishay.com
Document Number 85015
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For low noise and high gain applications such as power
amplifiers up to 2 GHz and for linear broadband ampli-
fiers.
Features Low noise figure High transition frequency fT = 8 GHz Excellent large signal behaviour 1
13 653
13 566
BFP193TW Marking: W19
Plastic case (SOT 343)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter 14
13 56613 654
BFP193TRW Marking: W91
Plastic case (SOT 343R)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter 3
BFP193T Marking: 193
Plastic case (SOT 143)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified

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