BFP183W ,RF-BipolarBFP183WNPN Silicon RF Transistor3
BFP183W
RF-Bipolar
BFP183W
NPN Silicon RF Transistor For low-noise, high-gain broadband amplifiers at
collector currents from 2 mA to 30 mA fT = 8 GHz
F = 1.2 dB at 900 MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Maximum Ratings
Thermal ResistanceTS is measured on the collector lead at the soldering point to the pcbFor calculation of RthJA please refer to Application Note Thermal Resistance
BFP183W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
DC characteristics
BFP183W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
AC characteristics (verified by random sampling)Gms = |S21 / S12|Gma = |S21 / S12| (k-(k2-1)1/2)
BFP183W
SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) :
Transistor Chip DataAll parameters are ready to use, no scalling is necessary.
Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil-und Satellitentechnik (IMST)
Package Equivalent Circuit:
BFP183W
Total power dissipation Ptot = f (TS)
50
100
150
200
250
300
350
400
500
tot
Permissible Pulse Load RthJS = f (tp)
10 0 10 10 10
thJS
Permissible Pulse Loadtotmax/PtotDC = f (tp) 0 10 10 10
tot
ax
/ P
totDC
BFP183W
Collector-base capacitance Ccb = f (VCB)
f = 1MHz
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
0.50
0.55
0.60
0.70
Transition frequency fT = f (IC) CE = Parameter
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
10.0
Power Gain Gma, Gms = f(IC)
f = 0.9GHz CE = Parameter
10
12
14
16
18
20
24
Power Gain Gma, Gms = f(IC)
f = 1.8GHz CE = Parameter
10
12
14
18
