BFP182W ,RF-BipolarBFP182WNPN Silicon RF Transistor3
BFP182W
RF-Bipolar
BFP182W
NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at
collector currents from 1 mA to 20 mA fT = 8 GHz
F = 1.2 dB at 900 MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Maximum Ratings
Thermal ResistanceTS is measured on the collector lead at the soldering point to the pcbFor calculation of RthJA please refer to Application Note Thermal Resistance
BFP182W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
DC characteristics
BFP182W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
AC characteristics (verified by random sampling)Gms = |S21 / S12|Gma = |S21 / S12| (k-(k2-1)1/2)
BFP182W
SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) :
Transistor Chip DataAll parameters are ready to use, no scalling is necessary.
Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil-und Satellitentechnik (IMST)
Package Equivalent Circuit:
BFP182W
Total power dissipation Ptot = f (TS)
50
100
150
200
300
tot
Permissible Pulse Load RthJS = f (tp)
10 0 10 10 10
thJS
Permissible Pulse Loadtotmax/PtotDC = f (tp) 0 10 10 10
tot
ax
/ P
totDC
BFP182W
Collector-base capacitance Ccb = f (VCB)
f = 1MHz
0.0
0.1
0.2
0.3
0.5
Transition frequency fT = f (IC) CE = Parameter
10
Power Gain Gma, Gms = f(IC)
f = 0.9GHz CE = Parameter
10
12
14
16
18
20
24
Power Gain Gma, Gms = f(IC)
f = 1.8GHz CE = Parameter
10
12
14
18
