BFP136W ,RF-BipolarBFP136WNPN Silicon RF Transistor3
BFP136W
RF-Bipolar
BFP136W
NPN Silicon RF Transistor For power amplifier in DECT and PCN systems fT = 5.5GHz Gold metalization for high reliability
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Maximum Ratings
Thermal ResistanceTS is measured on the collector lead at the soldering point to the pcbFor calculation of RthJA please refer to Application Note Thermal Resistance
BFP136W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
DC characteristics
BFP136W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
AC characteristics (verified by random sampling)
BFP136W
SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) :
Transistor Chip DataAll parameters are ready to use, no scalling is necessary.
Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil-und Satellitentechnik (IMST)
Package Equivalent Circuit:
BFP136W
Total power dissipation Ptot = f (TS)
100
200
300
400
500
600
700
800
900
1000
1200
tot
Permissible Pulse Load RthJS = f (tp)
10 0 10 10 10
thJS
Permissible Pulse Loadtotmax/PtotDC = f (tp) 0 10 10 10
tot
ax
/ P
totDC
BFP136W
Collector-base capacitance Ccb = f (VCB)
f = 1MHz
0.0
0.5
1.0
1.5
2.0
3.0
Transition frequency fT = f (IC) CE = Parameter
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
7.0
Power Gain Gma, Gms = f(IC)
f = 0.9GHz CE = Parameter
10
12
14
18
Power Gain Gma, Gms = f(IC)
f = 1.8GHz CE = Parameter
10
12
