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Partno	Mfg	Dc	Qty	Available	Descript
BFN37	INFINEON	N/a	20000	avai	PNP Silicon High Voltage Transistor f...
BFN39	Infineon	N/a	1960	avai	PNP Silicon High Voltage Transistor f...

BFN37 ,PNP Silicon High Voltage Transistor f...Characteristics at T = 25°C, unless otherwise specified.AParameter Symbol Values Unitmin. typ. max. ..
BFN38 ,NPN Silicon High Voltage Transistor f...Characteristics at T = 25°C, unless otherwise specified.AParameter Symbol Values Unitmin. typ. max. ..
BFN38 ,NPN Silicon High Voltage Transistor f...Characteristics at T = 25°C, unless otherwise specified.AParameter Symbol Values Unitmin. typ. max. ..
BFN38 ,NPN Silicon High Voltage Transistor f...CharacteristicsCollector-emitter breakdown voltage V V(BR)CEOI = 1 mA, I = 0 BFN 36 250 - -C BBF ..
BFN39 ,PNP Silicon High Voltage Transistor f...CharacteristicsCollector-emitter breakdown voltage V V(BR)CEOI = 1 mA, I = 0 BFN 37 250 - -C BBF ..
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BFN37-BFN39
PNP Silicon High Voltage Transistor f...
BFN 37, BFN 39
PNP Silicon High-Voltage Transistors
• Suitable for video output stages in TV sets and
switching power supplies
• High breakdown voltage
• Low collector-emitter saturation voltage
• Complementary types: BFN 36, BFN 38 (NPN)
Maximum Ratings
Thermal Resistance
BFN 37, BFN 39
Electrical Characteristics at TA = 25°C, unless otherwise specified.
DC Characteristics
BFN 37, BFN 39
Electrical Characteristics at TA = 25°C, unless otherwise specified.
AC Characteristics
BFN 37, BFN 39
Total power dissipation PS)
* Package mounted on epoxy0.0
150100˚C
PtotT;AS
Collector current I
EHP00641V
Collector cutoff current ICBO = f (TA)CB = 200V
EHP00644
CB0-1
typ
Permissible pulse loadtotmax / PtotDC = f (tp)1010-5-4-3-20
totmax
totPDC
BFN 37, BFN 39
DC current gain hCE = 10V10mA01010-10123
EHP0064310mA105231
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