BFN38 ,NPN Silicon High Voltage Transistor f...Characteristics at T = 25°C, unless otherwise specified.AParameter Symbol Values Unitmin. typ. max. ..
BFN38 ,NPN Silicon High Voltage Transistor f...Characteristics at T = 25°C, unless otherwise specified.AParameter Symbol Values Unitmin. typ. max. ..
BFN38 ,NPN Silicon High Voltage Transistor f...CharacteristicsCollector-emitter breakdown voltage V V(BR)CEOI = 1 mA, I = 0 BFN 36 250 - -C BBF ..
BFN39 ,PNP Silicon High Voltage Transistor f...CharacteristicsCollector-emitter breakdown voltage V V(BR)CEOI = 1 mA, I = 0 BFN 37 250 - -C BBF ..
BFP 420-E6327 , NPN Silicon RF Transistor
BFP136W ,RF-BipolarBFP136WNPN Silicon RF Transistor3
BFN36-BFN38
NPN Silicon High Voltage Transistor f...
BFN 36, BFN 38
NPN Silicon High-Voltage Transistors• Suitable for video output stages in TV sets and
switching power supplies
• High breakdown voltage
• Low collector-emitter saturation voltage
• Complementary types: BFN 37, BFN 39 (PNP)
Maximum Ratings
Thermal Resistance
BFN 36, BFN 38
Electrical Characteristics at TA = 25°C, unless otherwise specified.
DC Characteristics
BFN 36, BFN 38
Electrical Characteristics at TA = 25°C, unless otherwise specified.
AC Characteristics
BFN 36, BFN 38
Total power dissipation PS)
* Package mounted on epoxy0.0
150100˚C
PtotT;AS
Collector current IEHP00636V
Collector cutoff current ICBO = f (TA)CB = 30V
EHP00638
CB0-1
typ
Permissible pulse loadtotmax / PtotDC = f (tp)1010-5-4-3-20
totmax
totPDC
BFN 36, BFN 38
DC current gain hCE = 10V10mA01010-10123
EHP0063710mA105231
:
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