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BFL4036OMSEMIN/a40avaiN-Channel Power MOSFET 500 V, 14A, 520 mOhm TO-220F-3FS


BFL4036 ,N-Channel Power MOSFET 500 V, 14A, 520 mOhm TO-220F-3FSMaximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain to Source Voltage V 500 VDS ..
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BFL4036
N-Channel Power MOSFET 500 V, 14A, 520 mOhm TO-220F-3FS
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BFL4036
N-Channel Power MOSFET
500V, 14A, 0.52Ω, TO-220F-3FS
Features
• ON-resistance RDS(on)=0.4Ω (typ.) • Input capacitance Ciss=1000pF (typ.) • 10V drive
Specifi cations
Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Drain to Source Voltage VDSS 500 V
Gate to Source Voltage VGSS ±30 V
Drain Current (DC) IDc*1 Limited only by maximum temperature Tch=150°C 14 A
IDpack*2 Tc=25°C (Our ideal heat dissipation condition)*3 9.6 A
Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 50 A
Allowable Power Dissipation PD 2.0 W
Tc=25°C (Our ideal heat dissipation condition)*3 37 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Avalanche Energy (Single Pulse) *4 EAS 109 mJ
Avalanche Current *5 IAV 14 A
Note : *1 Shows chip capability *2 Package limited *3 Our condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *4 VDD=50V, L=1mH, IAV=14A (Fig.1) *5 L≤1mH, single pulse
Package Dimensions

unit : mm (typ)
Ordering number : ENA1830A
Ordering & Package Information
Device Package Shipping memo
BFL4036-1E TO-220F-3FSSC-67 50 pcs./tube Pb-Free
Marking Electrical Connection
1
1 : Gate
2 : Drain
3 : Source
1.47 MAX
2.763 0.5
3.18 BFL4036-1E
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