BFL4036 ,N-Channel Power MOSFET 500 V, 14A, 520 mOhm TO-220F-3FSMaximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain to Source Voltage V 500 VDS ..
BFM505 ,Dual NPN wideband transistorapplications in theMarking code: N0.GHz-range in the RF front end of analog and digital cellularpho ..
BFM520 ,Dual NPN wideband transistorLIMITING VALUESIn accordance with the Absolute Maximum System (IEC 134).SYMBOL PARAMETER CONDITIONS ..
BFM520 ,Dual NPN wideband transistorapplications in theMarking code: N2.GHz-range in the RF front end of analog and digital cellularpho ..
BFM520 ,Dual NPN wideband transistorFEATURES PINNING - SOT363A• Small sizePIN SYMBOL DESCRIPTION• Temperature and h matchedFE1b base 11 ..
BFM520 ,Dual NPN wideband transistor
BS62LV256SIG-70 , Very Low Power CMOS SRAM 32K X 8 bit
BS62LV256SIP55 , Very Low Power CMOS SRAM 32K X 8 bit
BS62LV256SIP-55 , Very Low Power CMOS SRAM 32K X 8 bit
BS62LV256SIP70 , Very Low Power CMOS SRAM 32K X 8 bit
BS62LV256SIP-70 , Very Low Power CMOS SRAM 32K X 8 bit
BS62LV256TC55 , Very Low Power CMOS SRAM 32K X 8 bit
BFL4036
N-Channel Power MOSFET 500 V, 14A, 520 mOhm TO-220F-3FS
http://
BFL4036
N-Channel Power MOSFET
500V, 14A, 0.52Ω, TO-220F-3FS
Features• ON-resistance RDS(on)=0.4Ω (typ.) • Input capacitance Ciss=1000pF (typ.) • 10V drive
Specifi cations
Absolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings Unit
Drain to Source Voltage VDSS 500 V
Gate to Source Voltage VGSS ±30 V
Drain Current (DC) IDc*1 Limited only by maximum temperature Tch=150°C 14 A
IDpack*2 Tc=25°C (Our ideal heat dissipation condition)*3 9.6 A
Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 50 A
Allowable Power Dissipation PD 2.0 W
Tc=25°C (Our ideal heat dissipation condition)*3 37 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Avalanche Energy (Single Pulse) *4 EAS 109 mJ
Avalanche Current *5 IAV 14 A
Note : *1 Shows chip capability *2 Package limited *3 Our condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *4 VDD=50V, L=1mH, IAV=14A (Fig.1) *5 L≤1mH, single pulse
Package Dimensionsunit : mm (typ)
Ordering number : ENA1830A
Ordering & Package Information
Device Package Shipping memo
BFL4036-1E TO-220F-3FSSC-67 50 pcs./tube Pb-Free
Marking Electrical Connection 1
1 : Gate
2 : Drain
3 : Source
1.47 MAX
2.763 0.5
3.18 BFL4036-1E