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Partno	Mfg	Dc	Qty	Available	Descript
BFG591		N/a	800	avai	NPN 7 GHz wideband transistor

BFG591 ,NPN 7 GHz wideband transistorLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).SYMBOL PARAMETER CON ..
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BFG591
NPN 7 GHz wideband transistor

Philips Semiconductors Product speciﬁcation
NPN 7 GHz wideband transistor BFG591
FEATURES High power gain Low noise figure High transition frequency Gold metallization ensures
excellent reliability.
APPLICATIONS
Intended for applications in the GHz
range such as MATV or CATV
amplifiers and RF communications
subscriber equipment.
DESCRIPTION
NPN silicon planar epitaxial transistor
in a plastic, 4-pin SOT223 package.
PINNING
QUICK REFERENCE DATA
Note Ts is the temperature at the soldering point of the collector pin.
Philips Semiconductors Product speciﬁcation
NPN 7 GHz wideband transistor BFG591
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note to the Limiting values and Thermal characteristics Ts is the temperature at the soldering point of the collector pin.
Philips Semiconductors Product speciﬁcation
NPN 7 GHz wideband transistor BFG591
CHARACTERISTICS =25 °C (unless otherwise speciﬁed).
Notes GUM is the maximum unilateral power gain, assuming s12 is zero. dim=60 dB (DIN45004B); =Vo;Vq =Vo−6 dB; Vr =Vo−6 dB;= 795.25 MHz; fq= 803.25 MHz; fr= 803.25 MHz; measured at f(p+q-r)= 793.25 MHz.UM 10 s21211– () 1s22– ()------------------------------------------------------------ dB.log=
Philips Semiconductors Product speciﬁcation
NPN 7 GHz wideband transistor BFG591
Philips Semiconductors Product speciﬁcation
NPN 7 GHz wideband transistor BFG591

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