BFG541 ,NPN 9 GHz wideband transistorapplications in the GHz range, such as analog and digital cellular 123telephones, cordless telephon ..
BFG591 ,NPN 7 GHz wideband transistorLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).SYMBOL PARAMETER CON ..
BFG67 ,Silicon NPN Planar RF Transistor
BFG67 ,Silicon NPN Planar RF Transistor
BFG67 ,Silicon NPN Planar RF Transistor
BFG67 ,Silicon NPN Planar RF Transistor
BS62LV256PC55 , Very Low Power CMOS SRAM 32K X 8 bit
BS62LV256PC70 , Very Low Power CMOS SRAM 32K X 8 bit
BS62LV256PCP55 , Very Low Power CMOS SRAM 32K X 8 bit
BS62LV256PCP70 , Very Low Power CMOS SRAM 32K X 8 bit
BS62LV256PCP-70 , Very Low Power CMOS SRAM 32K X 8 bit
BS62LV256PI55 , Very Low Power CMOS SRAM 32K X 8 bit
BFG541
NPN 9 GHz wideband transistor
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFG541
FEATURES High power gain Low noise figure High transition frequency Gold metallization ensures
excellent reliability.
DESCRIPTIONNPN silicon planar epitaxial
transistor, intended for wideband
applications in the GHz range, such
as analog and digital cellular
telephones, cordless telephones
(CT1, CT2, DECT, etc.), radar
detectors, satellite TV tuners (SATV),
MATV/CATV amplifiers and repeater
amplifiers in fibre-optic systems.
The transistors are mounted in a
plastic SOT223 envelope.
PINNING
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFG541
QUICK REFERENCE DATA
LIMITING VALUESIn accordance with the Absolute Maximum System (IEC 134).
THERMAL RESISTANCE
Note Ts is the temperature at the soldering point of the collector tab.
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFG541
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFG541
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFG541
In Figs 6 to 9, GUM = maximum power gain; MSG =
maximum stable gain; Gmax = maximum available gain.
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFG541
