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Partno	Mfg	Dc	Qty	Available	Descript
BFG540W	NXP/PHILIPS	N/a	3000	avai	NPN 9 GHz wideband transistor

BFG540W ,NPN 9 GHz wideband transistorapplications in BFG540W (see Fig.1)the GHz range, such as analog and digital cellular telephones, c ..
BFG540W/X ,NPN 9 GHz wideband transistor
BFG540W/X ,NPN 9 GHz wideband transistor
BFG540W/XR ,NPN 9 GHz wideband transistor
BFG540W/XR ,NPN 9 GHz wideband transistor
BFG540X ,NPN 9GHz wideband transistorDISCRETE SEMICONDUCTORSDATA SHEETBFG540; BFG540/X; BFG540/XRNPN 9 GHz wideband transistorProduct sp ..
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BFG540W
NPN 9 GHz wideband transistor

NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFG540W
BFG540W/X; BFG540W/XR
FEATURES High power gain Low noise figure High transition frequency Gold metallization ensures
excellent reliability.
APPLICATIONS
RF front end wideband applications in
the GHz range, such as analog and
digital cellular telephones, cordless
telephones (CT2, CT3, PCN, DECT,
etc.), radar detectors, pagers, satellite
television tuners (SATV),
MATV/CATV amplifiers and repeater
amplifiers in fibre-optic systems.
DESCRIPTION
NPN silicon planar epitaxial
transistors in 4-pin dual-emitter
SOT343N and SOT343R plastic
packages.
MARKING
PINNING
QUICK REFERENCE DATA
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFG540W
BFG540W/X; BFG540W/XR
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note Ts is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
Note Ts is the temperature at the soldering point of the collector pin.
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFG540W
BFG540W/X; BFG540W/XR
CHARACTERISTICS =25 C unless otherwise specified.
Notes GUM is the maximum unilateral power gain, assuming s12 is zero. IC =40mA; VCE =8V; RL =50 ; Tamb =25 C;fp =900 MHz; fq= 902 MHz; measured at f(2pq)= 898 MHz and f(2qp) =904 MHz. dim= 60 dB (DIN45004B); Vp =Vo; Vq =Vo 6dB; Vr =Vo 6dB; RL =75 ; VCE =8 V; IC =40mA;fp =795.25MHz; fq= 803.25 MHz; fr= 805.25 MHz; measured at f(p+qr) =793.25MHz. IC =40mA; VCE =8V; Vo= 275 mV; RL =75 ; Tamb =25 C;fp =250 MHz; fq= 560 MHz; measured at f(p+q)= 810 MHz.
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFG540W
BFG540W/X; BFG540W/XR
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFG540W
BFG540W/X; BFG540W/XR
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFG540W
BFG540W/X; BFG540W/XR
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFG540W
BFG540W/X; BFG540W/XR
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFG540W
BFG540W/X; BFG540W/XR

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