BFG540/X ,NPN 9GHz wideband transistor
BFG540/X ,NPN 9GHz wideband transistorFEATURES PINNINGhandbook, 2 columns4 3• High power gainPIN DESCRIPTION• Low noise figureBFG540 (Fig ..
BFG540/X ,NPN 9GHz wideband transistor
BFG540/XR ,NPN 9GHz wideband transistor
BFG540W ,NPN 9 GHz wideband transistorapplications in BFG540W (see Fig.1)the GHz range, such as analog and digital cellular telephones, c ..
BFG540W/X ,NPN 9 GHz wideband transistor
BS62LV2006TI-55 , Very Low Power/Voltage CMOS SRAM 256K X 8 bit
BS62LV2008TCP70 , Very Low Power/Voltage CMOS SRAM 256K X 8 bit
BS62LV2009SI-70 , Very Low Power/Voltage CMOS SRAM 256K X 8 bit
BS62LV256PC55 , Very Low Power CMOS SRAM 32K X 8 bit
BS62LV256PC70 , Very Low Power CMOS SRAM 32K X 8 bit
BS62LV256PCP55 , Very Low Power CMOS SRAM 32K X 8 bit
BFG540-BFG540/X-BFG540X
NPN 9GHz wideband transistor
Philips Semiconductors Product specification
NPN 9 GHz wideband transistor BFG540; BFG540/X;
BFG540/XR
FEATURES High power gain Low noise figure High transition frequency Gold metallization ensures
excellent reliability.
DESCRIPTIONNPN silicon planar epitaxial
transistors, intended for wideband
applications in the GHz range, such
as analog and digital cellular
telephones, cordless telephones
(CT1, CT2, DECT, etc.), radar
detectors, satelliteTV tuners (SATV),
MATV/CATV amplifiers and repeater
amplifiers in fibre-optical systems.
The transistors are mounted inplastic
SOT143B and SOT143R packages.
PINNING
Philips Semiconductors Product specification
NPN 9 GHz wideband transistor BFG540; BFG540/X;
BFG540/XR
QUICK REFERENCE DATA
LIMITING VALUESIn accordance with the Absolute Maximum System (IEC 60134).
Note Ts is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
Note Ts is the temperature at the soldering point of the collector pin.
Philips Semiconductors Product specification
NPN 9 GHz wideband transistor BFG540; BFG540/X;
BFG540/XR
CHARACTERISTICS =25 °C unless otherwise specified.
Notes GUM is the maximum unilateral power gain, assuming s12 is zero and VCE=8 V; IC=40 mA; RL =50 Ω; Tamb =25 °C;= 900 MHz; fq= 902 MHz;
measured at f(2p−q)= 898 MHz and f(2q−p)= 904 MHz. dim= −60 dB (DIN 45004B); IC=40 mA; VCE=8 V; ZL =ZS =75 Ω; Tamb =25 °C; =VO; Vq =VO−6 dB; Vr =VO−6 dB;= 795.25 MHz; fq= 803.25 MHz; fr= 805.25 MHz;
measured at f(p+q−r)= 793.25 MHz. IC=40 mA; VCE=8 V; VO= 275 mV; Tamb =25 °C;= 250 MHz; fq= 560 MHz; measured at f(p+q)= 810 MHz.UM 10 s212112– () 1s222– ()-------------------------------------------------------- dB.log=
Philips Semiconductors Product specification
NPN 9 GHz wideband transistor BFG540; BFG540/X;
BFG540/XR
Philips Semiconductors Product specification
NPN 9 GHz wideband transistor BFG540; BFG540/X;
BFG540/XR
Philips Semiconductors Product specification
NPN 9 GHz wideband transistor BFG540; BFG540/X;
BFG540/XR
Philips Semiconductors Product specification
NPN 9 GHz wideband transistor BFG540; BFG540/X;
BFG540/XR
