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BFG520/X from PHI,Philips

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BFG520/X

Manufacturer: PHI

NPN 9 GHz wideband transistor

Partnumber Manufacturer Quantity Availability
BFG520/X,BFG520X PHI 10000 In Stock

Description and Introduction

NPN 9 GHz wideband transistor The **BFG520/X** from Philips is a high-performance NPN silicon RF transistor designed for applications requiring excellent gain and low noise characteristics. This component is widely used in RF amplification stages, particularly in communication systems, where signal integrity and efficiency are critical.  

With a transition frequency (fT) of up to 9 GHz and low noise figures, the BFG520/X is well-suited for VHF and UHF applications, including mobile radio, broadcast equipment, and wireless infrastructure. Its robust construction ensures reliable operation under varying environmental conditions, making it a preferred choice for industrial and commercial applications.  

Key features include high power gain, low intermodulation distortion, and a compact SOT143 package, which facilitates easy integration into circuit designs. The transistor's optimized performance at lower voltage levels enhances energy efficiency, aligning with modern power-saving requirements.  

Engineers and designers favor the BFG520/X for its consistent performance and durability, ensuring long-term stability in demanding RF circuits. Whether used in amplifiers, oscillators, or signal processing modules, this transistor delivers reliable results, making it a trusted component in high-frequency electronic systems.  

For detailed specifications, always refer to the manufacturer's datasheet to ensure proper implementation in circuit designs.

Partnumber Manufacturer Quantity Availability
BFG520/X,BFG520X NXP 2235 In Stock

Description and Introduction

NPN 9 GHz wideband transistor The BFG520/X is a NPN RF transistor manufactured by NXP Semiconductors.  

**Key Specifications:**  
- **Type:** NPN Silicon RF Transistor  
- **Package:** SOT143 (SC-62)  
- **Frequency Range:** Up to 9 GHz  
- **Power Gain:** 12 dB typical at 2 GHz  
- **Noise Figure:** 1.2 dB typical at 2 GHz  
- **Collector-Emitter Voltage (VCE):** 12 V  
- **Collector Current (IC):** 30 mA  
- **Power Dissipation (Ptot):** 150 mW  
- **Applications:** Low-noise amplifiers, RF front-end circuits, and wireless communication systems.  

For exact performance characteristics, refer to the official NXP datasheet.

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