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BFG505
NPN 9 GHz wideband transistor
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NXP Semiconductors
BFG505; BFG505/X
NPN 9 GHz wideband transistors
Rev. 04 — 22 November 2007 Product data sheet
NXP Semiconductors Product specification
NPN 9 GHz wideband transistors BFG505; BFG505/X
FEATURES High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability.
APPLICATIONSRF front end applications in the GHz range, such as
analog and digital cellular telephones, cordless telephones
(CT1, CT2, DECT, etc.), radar detectors, pagers and
satellite TV tuners (SATV).
DESCRIPTIONNPN silicon planar epitaxial transistor in a 4-pin
dual-emitter SOT143B plastic package.
MARKING
PINNING
QUICK REFERENCE DATA
NXP Semiconductors Product specification
NPN 9 GHz wideband transistors BFG505; BFG505/X
LIMITING VALUESIn accordance with the Absolute Maximum System (IEC 134).
Note Ts is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
Note Ts is the temperature at the soldering point of the collector pin.
NXP Semiconductors Product specification
NPN 9 GHz wideband transistors BFG505; BFG505/X
CHARACTERISTICSTj = 25 °C unless otherwise specified.
Notes GUM is the maximum unilateral power gain, assuming S12 is zero and VCE=6 V; IC=5 mA; RL =50 Ω; Tamb =25 °C;= 900 MHz; fq= 902 MHz;
measured at 2fp−fq= 898 MHz and 2fq−fp= 904 MHz.UM 10 S212112– () 1S222– ()-------------------------------------------------------------- dB.log=
NXP Semiconductors Product specification
NPN 9 GHz wideband transistors BFG505; BFG505/X
NXP Semiconductors Product specification
NPN 9 GHz wideband transistors BFG505; BFG505/X
NXP Semiconductors Product specification
NPN 9 GHz wideband transistors BFG505; BFG505/X
