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BFG480W
NPN wideband transistor
Philips Semiconductors Preliminary specification
NPN wideband transistor BFG480W
FEATURES High power gain High efficiency Low noise figure High transition frequency Emitter is thermal lead Low feedback capacitance Linear and non-linear operation.
APPLICATIONS RF front end with high linearity system demands
(CDMA) Common emitter class AB driver.
DESCRIPTIONNPN double polysilicon wideband transistor with buried
layer for low voltage applications in a plastic, 4-pin
dual-emitter SOT343R package.
PINNING
QUICK REFERENCE DATA
Philips Semiconductors Preliminary specification
NPN wideband transistor BFG480W
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).
Note Ts is the temperature at the soldering point of the emitter pins.
THERMAL CHARACTERISTICS
Philips Semiconductors Preliminary specification
NPN wideband transistor BFG480W
CHARACTERISTICS =25 °C unless otherwise specified.
Notes Gmax is the maximum power gain, if K> 1. If K< 1 then Gmax= MSG; see Figs6,7 and8. ZS is optimized for noise; ZL is optimized for gain.
Philips Semiconductors Preliminary specification
NPN wideband transistor BFG480W
Philips Semiconductors Preliminary specification
NPN wideband transistor BFG480W
Philips Semiconductors Preliminary specification
NPN wideband transistor BFG480W
Philips Semiconductors Preliminary specification
NPN wideband transistor BFG480W
