BFG425W-- ,NPN 25 GHz wideband transistorLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).SYMBOL PARAMETER CON ..
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BS62LV1027TC70 , Very Low Power CMOS SRAM 128K X 8 bit
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BFG425W-BFG425W--
NPN 25 GHz wideband transistor
NXP Semiconductors Product specification
NPN 25 GHz wideband transistor BFG425W
FEATURES Very high power gain Low noise figure High transition frequency Emitter is thermal lead Low feedback capacitance.
APPLICATIONS RF front end Wideband applications, e.g. analog and digital cellular
telephones, cordless telephones (PHS, DECT, etc.) Radar detectors Pagers Satellite television tuners (SATV) High frequency oscillators.
DESCRIPTIONNPN double polysilicon wideband transistor with buried
layer for low voltage applications in a plastic, 4-pin
dual-emitter SOT343R package.
PINNING
QUICK REFERENCE DATA
NXP Semiconductors Product specification
NPN 25 GHz wideband transistor BFG425W
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).
Note Ts is the temperature at the soldering point of the emitter pins.
THERMAL CHARACTERISTICS
NXP Semiconductors Product specification
NPN 25 GHz wideband transistor BFG425W
CHARACTERISTICS =25 C unless otherwise specified.
Notes Gmax is the maximum power gain, if K> 1. If K< 1 then Gmax =MSG; seeFigs6,7and8. ZS is optimized for noise; ZL is optimized for gain.
NXP Semiconductors Product specification
NPN 25 GHz wideband transistor BFG425W
NXP Semiconductors Product specification
NPN 25 GHz wideband transistor BFG425W
