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Partno	Mfg	Dc	Qty	Available	Descript
BFG424W	NXP	N/a	500	avai	NPN 25 GHz wideband transistor

BFG424W ,NPN 25 GHz wideband transistorapplications such as: analog and digital cellular telephones cordless telephones (Cordless Teleph ..
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BFG425W-- ,NPN 25 GHz wideband transistorLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).SYMBOL PARAMETER CON ..
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BFG424W
NPN 25 GHz wideband transistor
1. Product profile
1.1 General description
NPN double polysilicon wideband transistor with buried layer for low voltage applications
in a plastic, 4-pin dual-emitter SOT343R package.
1.2 Features and benefits Very high power gain Low noise figure High transition frequency Emitter is thermal lead Low feedback capacitance
1.3 Applications Radio Frequency (RF) front end wideband applications such as: analog and digital cellular telephones cordless telephones (Cordless Telephone (CT), Personal Handy-phone
System (PHS), Digital Enhanced Cordless Telecommunications (DECT), etc.) radar detectors pagers Satellite Antenna TeleVison (SATV) tuners high frequency oscillators e.g. Dielectric Resonator Oscillator (DRO) for Low Noise
Block (LNB)
1.4 Quick reference data
BFG424W
NPN 25 GHz wideband transistor
Rev. 2 — 13 September 2011 Product data sheet
Table 1. Quick reference data
VCBO collector-base voltage open emitter - - 10 V
VCEO collector-emitter voltage open base - - 4.5 V collector current - 25 30 mA
Ptot total power dissipation Tsp 103C [1]- - 135 mW
NXP Semiconductors BFG424W
NPN 25 GHz wideband transistor
[1] Tsp is the temperature at the soldering point of the emitter pins.
[2] Gp(max) is the maximum power gain, if K> 1. If K< 1 then Gp(max)= Maximum Stable Gain (MSG), see
Figure8.
2. Pinning information
3. Ordering information
4. Marking
[1]*= p: made in Hong Kong.
hFE DC current gain IC =25mA; VCE =2V; =25C 80 120
CCBS collector-base
capacitance
VCB=2 V; f=1 MHz - 105 - fF transition frequency IC =25mA; VCE =2V; 2GHz; Tamb =25C
-25 -GHz
Gp(max) maximum power gain IC =25mA; VCE =2V; 2GHz; Tamb =25C
[2] -22 -dB noise figure IC =2mA; VCE =2V; 2GHz; S = opt
-1.2 -dB
Table 1. Quick reference data …continued
Table 2. Pinning
Table 3. Ordering information
BFG424W - plastic surface mounted package; reverse pinning; leads
SOT343R
Table 4. Marking
BFG424W ND*
NXP Semiconductors BFG424W
NPN 25 GHz wideband transistor
5. Limiting values
[1] Tsp is the temperature at the soldering point of the emitter pins.
6. Thermal characteristics
[1] Tsp is the temperature at the soldering point of the emitter pins.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VCBO collector-base voltage open emitter - 10 V
VCEO collector-emitter voltage open base - 4.5 V
VEBO emitter-base voltage open collector - 1 V collector current - 30 mA
Ptot total power dissipation Tsp 103C [1] -135 mW
Tstg storage temperature 65 +150 C junction temperature - 150 C
Table 6. Thermal characteristics
Rth(j-sp) thermal resistance from junction
to solder point
Tsp 103C [1] 340 K/W
NXP Semiconductors BFG424W
NPN 25 GHz wideband transistor
7. Characteristics
[1] Gp(max) is the maximum power gain, if K 1. If K 1 then Gp(max) =MSG, see Figure8.
[2] ZS is optimized for noise; ZL is optimized for gain.
Table 7. Characteristics =25 C; unless otherwise specified.
V(BR)CBO collector-base
breakdown voltage =2.5 A; IE=0 mA 10 --V
V(BR)CEO collector-emitter
breakdown voltage =1mA; IB=0 mA 4.5 --V
V(BR)EBO open-collector
emitter-base
breakdown voltage =2.5 A; IC=0 mA 1 --V
ICBO collector-base
cut-off current =0mA; VCB= 4.5V --15 nA
hFE DC current gain IC =25mA; VCE=2V 5080120
CCES collector-emitter
capacitance
VCB=2 V; f=1 MHz -385 -fF
CEBS emitter-base
capacitance
VEB= 0.5 V; f=1 MHz -515 -fF
CCBS collector-base
capacitance
VCB=2 V; f=1 MHz -105 -fF transition frequency IC =25mA; VCE =2V; f=2GHz;
Tamb =25C
-25 -GHz
Gp(max) maximum power
gain =25mA; VCE =2V; f=2GHz;
Tamb =25C
[1] -22 -dB
s212 insertion power gainIC =25mA; VCE =2V; f=2GHz;
Tamb =25C
-18 -dB noise figure IC =2mA; VCE =2V;
f=900MHz; S = opt
-0.8 -dB =2mA; VCE =2V; f= 2GHz; S = opt
-1.2 -dB
PL(1dB) output power at
1dB gain
compression =25mA; VCE =2V; f=2GHz; =ZS(opt); ZL =ZL(opt)
[2] -12 -dBm
IP3 third-order intercept
point =25mA; VCE =2V; f=2GHz; =ZS(opt); ZL =ZL(opt)
[2] -22 -dBm
NXP Semiconductors BFG424W
NPN 25 GHz wideband transistor
NXP Semiconductors BFG424W
NPN 25 GHz wideband transistor
NXP Semiconductors BFG424W
NPN 25 GHz wideband transistor

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