BFG410W ,NPN 22 GHz wideband transistorLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).SYMBOL PARAMETER CON ..
BFG424F ,NPN 25 GHz wideband transistorapplications such as: analog and digital cellular telephones cordless telephones (Cordless Teleph ..
BFG424W ,NPN 25 GHz wideband transistorapplications such as: analog and digital cellular telephones cordless telephones (Cordless Teleph ..
BFG425W ,NPN 25 GHz wideband transistorFEATURES PINNING Very high power gainPIN DESCRIPTION Low noise figure1emitter High transition fr ..
BFG425W-- ,NPN 25 GHz wideband transistorLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).SYMBOL PARAMETER CON ..
BFG480W ,NPN wideband transistorapplications in a plastic, 4-pinMarking code: P6.dual-emitter SOT343R package.Fig.1 Simplified out ..
BS62LV1027STCP70 , Very Low Power CMOS SRAM 128K X 8 bit
BS62LV1027STI-55 , Very Low Power/Voltage CMOS SRAM
BS62LV1027STI-70 , Very Low Power/Voltage CMOS SRAM
BS62LV1027STIG70 , Very Low Power CMOS SRAM 128K X 8 bit
BS62LV1027STIG-70 , Very Low Power CMOS SRAM 128K X 8 bit
BS62LV1027TC55 , Very Low Power CMOS SRAM 128K X 8 bit
BFG410W
NPN 22 GHz wideband transistor
NXP Semiconductors Product specification
NPN 22 GHz wideband transistor BFG410W
FEATURES Very high power gain Low noise figure High transition frequency Emitter is thermal lead Low feedback capacitance.
APPLICATIONS RF front end Wideband applications, e.g. analog and digital cellular
telephones, cordless telephones (PHS, DECT, etc.) Radar detectors Pagers Satellite television tuners (SATV) High frequency oscillators.
DESCRIPTIONNPN double polysilicon wideband transistor with buried
layer for low voltage applications in a plastic, 4-pin
dual-emitter SOT343R package.
PINNING
QUICK REFERENCE DATA
NXP Semiconductors Product specification
NPN 22 GHz wideband transistor BFG410W
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).
Note Ts is the temperature at the soldering point of the emitter pins.
THERMAL CHARACTERISTICS
NXP Semiconductors Product specification
NPN 22 GHz wideband transistor BFG410W
CHARACTERISTICS =25 C unless otherwise specified.
Notes Gmax is the maximum power gain, if K> 1. If K< 1 then Gmax =MSG; seeFigs6,7and8. ZS is optimized for noise; ZL is optimized for gain.
NXP Semiconductors Product specification
NPN 22 GHz wideband transistor BFG410W
NXP Semiconductors Product specification
NPN 22 GHz wideband transistor BFG410W
NXP Semiconductors Product specification
NPN 22 GHz wideband transistor BFG410W
