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BFG31 ,PNP 5 GHz wideband transistorLIMITING VALUESIn accordance with the Absolute Maximum System (IEC 134).SYMBOL PARAMETER CONDITIONS ..
BFG31 ,PNP 5 GHz wideband transistor
BFG31 ,PNP 5 GHz wideband transistorapplications.NPN complement is the BFG97.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS MIN. TYP. ..
BFG31 ,PNP 5 GHz wideband transistorFEATURES PINNINGlfpage High output voltage capability 4PIN DESCRIPTION High gain bandwidth produc ..
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BFG31
PNP 5 GHz wideband transistor
NXP Semiconductors Product specification
PNP 5 GHz wideband transistor BFG31
FEATURES High output voltage capability High gain bandwidth product Good thermal stability Gold metallization ensures
excellent reliability.
DESCRIPTIONPNP planar epitaxial transistor
mounted in a plastic SOT223
envelope.
It is intended for wideband amplifier
applications.
NPN complement is the BFG97.
PINNING
QUICK REFERENCE DATA
LIMITING VALUESIn accordance with the Absolute Maximum System (IEC 134).
Note Ts is the temperature at the soldering point of the collector tab.
NXP Semiconductors Product specification
PNP 5 GHz wideband transistor BFG31
THERMAL CHARACTERISTICS
Note Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS =25 C unless otherwise specified.
Notes GUM is the maximum unilateral power gain, assuming S12 is zero and dim= 60 dB; IC= 70 mA; VCE= 10 V; RL =75 ; Tamb =25 C; =Vo at dim= 60 dB; fp= 850.25 MHz; =Vo 6 dB; fq= 858.25 MHz; =Vo 6 dB; fr= 860.25 MHz;
measured at f(p+qr)= 848.25 MHz. dim= 60 dB (DIN 45004B); IC= 70 mA; VCE= 10 V; RL =75 ; Tamb =25 C; =Vo =at dim= 60 dB; fp= 445.25 MHz; =Vo 6 dB; fq= 453.25 MHz; =Vo 6 dB; fr= 455.25 MHz;
measured at f(p+qr)= 443.25 MHz.
NXP Semiconductors Product specification
PNP 5 GHz wideband transistor BFG31
NXP Semiconductors Product specification
PNP 5 GHz wideband transistor BFG31
NXP Semiconductors Product specification
PNP 5 GHz wideband transistor BFG31