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Partno	Mfg	Dc	Qty	Available	Descript
BFG21W	PHL	N/a	12490	avai	UHF power transistor

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BFG21W
UHF power transistor

Philips Semiconductors Product specification
UHF power transistor BFG21W
FEATURES High power gain High efficiency 1.9 GHz operating area Linear and non-linear operation.
APPLICATIONS Common emitter class-AB output stage in hand held
radio equipment at 1.9 GHz such as DECT, PHS, etc. Driver for DCS1800, 1900.
DESCRIPTION
NPN double polysilicon bipolar power transistor with
buried layer for low voltage medium power applications
encapsulated in a plastic, 4-pin dual-emitter SOT343R
package.
PINNING
QUICK REFERENCE DATA
RF performance at Ts≤60 °C in a common emitter test circuit.
Philips Semiconductors Product specification
UHF power transistor BFG21W
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note Ts is the temperature at the soldering point of the emitter pins.
THERMAL CHARACTERISTICS
Note Ts is the temperature at the soldering point of the emitter pins.
Philips Semiconductors Product specification
UHF power transistor BFG21W
CHARACTERISTICS =25 °C unless otherwise specified.
APPLICATION INFORMATION
RF performance at Ts≤60 °C in a common emitter test circuit (see Figs4 and5).
Ruggedness in class-AB operation
The transistor is capable of withstanding a load mismatch
corresponding to VSWR=6: 1 through all phases at dBm output power under pulsed conditions:δ =1:2;=5 ms; f= 1.9 GHz at VCE= 4.5V.
Philips Semiconductors Product specification
UHF power transistor BFG21W
List of components used in test circuit (see Figs4 and5)
Notes American Technical Ceramics type 100A or capacitor of same quality. The striplines are on a double copper-clad printed-circuit board with PTFE fibre-glass dielectric (εr= 6.15,
tanδ= 0.0019); thickness 0.64 mm, copper cladding=35 μm.
Philips Semiconductors Product specification
UHF power transistor BFG21W

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