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BFG198
NPN 8 GHz wideband transistor
Philips Semiconductors Product specification
NPN 8 GHz wideband transistor BFG198
DESCRIPTIONNPN planar epitaxial transistor in a
plastic SOT223 envelope, intended
for wideband amplifier applications.
The device features a high gain and
excellent output voltage capabilities.
PINNING
QUICK REFERENCE DATA
LIMITING VALUESIn accordance with the Absolute Maximum System (IEC 134).
Note Ts is the temperature at the soldering point of the collector tab.
Philips Semiconductors Product specification
NPN 8 GHz wideband transistor BFG198
THERMAL CHARACTERISTICS
Note Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS =25 °C unless otherwise specified.
Note GUM is the maximum unilateral power gain, assuming S12 is zero and dim= −60 dB (DIN 45004B); IC=70 mA; VCE=8 V; RL =75 Ω; Tamb =25 °C; =Vo at dim= −60 dB; =Vo−6 dB; fp= 445.25 MHz; =Vo−6 dB; fq= 453.25 MHz; fr= 455.25 MHz
measured at f(p+q−r)= 443.25 MHz. dim= −60 dB (DIN 45004B); IC=70 mA; VCE=8 V; RL =75 Ω; Tamb =25 °C; =Vo at dim= −60 dB; fp= 795.25 MHz; =Vo−6 dB; fq= 803.25 MHz; =Vo−6 dB; fr= 805.25 MHz;
measured at f(p+q−r)= 793.25 MHz. IC=50 mA; VCE=8 V; Vo=50 dBmV;
f(p+q)= 810 MHz; fp= 250 MHz; fq= 560 MHz.UM 10 s212112– () 1s222– ()------------------------------------------------------------ dB.log=
Philips Semiconductors Product specification
NPN 8 GHz wideband transistor BFG198
List of components (see test circuit)
Note Components C5, L1, L3, L4, and R2 are mounted on the underside of the PCB.
The circuit is constructed on a double copper-clad printed circuit board with PTFE dielectric (εr= 2.2);
thickness1⁄16 inch; thickness of copper sheet 2 x 35 μm; see Fig.2.
Philips Semiconductors Product specification
NPN 8 GHz wideband transistor BFG198
Philips Semiconductors Product specification
NPN 8 GHz wideband transistor BFG198
