BFG135 ,NPN 7GHz wideband transistorLIMITING VALUESIn accordance with the Absolute Maximum System (IEC 134).SYMBOL PARAMETER CONDITIONS ..
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BFG135
NPN 7GHz wideband transistor
Philips Semiconductors Product specification
NPN 7GHz wideband transistor BFG135
DESCRIPTIONNPN silicon planar epitaxial transistor
in a plastic SOT223 envelope,
intended for wideband amplifier
applications. The small emitter
structures, with integrated
emitter-ballasting resistors, ensure
high output voltage capabilities at a
low distortion level.
The distribution of the active areas
across the surface of the device gives
an excellent temperature profile.
PINNING
QUICK REFERENCE DATA
LIMITING VALUESIn accordance with the Absolute Maximum System (IEC 134).
Note Ts is the temperature at the soldering point of the collector tab.
Philips Semiconductors Product specification
NPN 7GHz wideband transistor BFG135
THERMAL CHARACTERISTICS
Note Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS =25 °C unless otherwise specified.
Notes dim= −60 dB (DIN 45004B); IC= 100 mA; VCE=10 V; RL =75 Ω; Tamb =25 °C; =Vo at dim= −60 dB; fp= 445.25 MHz; =Vo−6 dB; fq= 453.25 MHz; =Vo−6 dB; fr= 455.25 MHz;
measured at f(p+q−r)= 443.25 MHz. dim= −60 dB (DIN 45004B); IC= 100 mA; VCE=10 V; RL =75 Ω; Tamb =25 °C; =Vo at dim= −60 dB; fp= 795.25 MHz; =Vo−6 dB; fq= 803.25 MHz; =Vo−6 dB; fr= 805.25 MHz;
measured at f(p+q−r)= 793.25 MHz.
Philips Semiconductors Product specification
NPN 7GHz wideband transistor BFG135
List of components (see test circuit)
Note Components C4, L3, L6 and R2 are mounted on the underside of the PCB.
The circuit is constructed on a double copper-clad printed circuit board with PTFE dielectric (εr= 2.2); thickness⁄16 inch; thickness of copper sheet1⁄32 inch.
Philips Semiconductors Product specification
NPN 7GHz wideband transistor BFG135
Philips Semiconductors Product specification
NPN 7GHz wideband transistor BFG135
