BFG10W ,NPN wideband transistorLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).SYMBOL PARAMETER CON ..
BFG11/X ,NPN 2 GHz RF power transistor
BFG11/X ,NPN 2 GHz RF power transistor
BFG135 ,NPN 7GHz wideband transistorLIMITING VALUESIn accordance with the Absolute Maximum System (IEC 134).SYMBOL PARAMETER CONDITIONS ..
BFG16A ,NPN 2 GHz wideband transistor
BFG16A ,NPN 2 GHz wideband transistor
BS62LV1027PC55 , Very Low Power CMOS SRAM 128K X 8 bit
BS62LV1027PC70 , Very Low Power CMOS SRAM 128K X 8 bit
BS62LV1027PC-70 , Very Low Power/Voltage CMOS SRAM
BS62LV1027PCP55 , Very Low Power CMOS SRAM 128K X 8 bit
BS62LV1027PCP-55 , Very Low Power CMOS SRAM 128K X 8 bit
BS62LV1027PCP70 , Very Low Power CMOS SRAM 128K X 8 bit
BFG10W
NPN wideband transistor
NXP Semiconductors Product specification
UHF power transistor BFG10W/X
FEATURES High efficiency Small size discrete power amplifier 900 MHz and 1.9 GHz operating
areas Gold metallization ensures
excellent reliability.
APPLICATIONS Common emitter class-AB
operation in hand-held radio
equipment up to 1.9 GHz.
DESCRIPTIONNPN silicon planar epitaxial transistor
encapsulated in a plastic, 4-pin
dual-emitter SOT343N package.
PINNING
QUICK REFERENCE DATA RF performance at Tamb =25 C in a common-emitter test circuit.
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note to the Limiting values and Thermal characteristics Ts is the temperature at the soldering point of the collector pin.
NXP Semiconductors Product specification
UHF power transistor BFG10W/X
CHARACTERISTICS =25 C (unless otherwise specified).
NXP Semiconductors Product specification
UHF power transistor BFG10W/X
NXP Semiconductors Product specification
UHF power transistor BFG10W/X
APPLICATION INFORMATIONRF performance at Tamb =25 C in a common-emitter test circuit.
Ruggedness in class-AB operationThe BFG10W/X is capable of withstanding a load mismatch corresponding to VSWR=6: 1 through all phases under
pulsed conditions up to a supply voltage of 8.6 V under the conditions: 900 MHz; 650 mW; tp= 4.6 ms; duty cycle of 1:8
and up to a supply voltage of 5.5 V under the conditions: 1.9 GHz; 200 mW; tp=10 ms; duty cycle of 1:2.
NXP Semiconductors Product specification
UHF power transistor BFG10W/X
List of components (see Fig.6)
Notes VBE at 1 mA must be 0.65V. American Technical Ceramics type 100A or capacitor of same quality. Resonant at 1900 MHz.
