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Partno	Mfg	Dc	Qty	Available	Descript
BFG10/X |BFG10X	PHILIPS	N/a	2000	avai	NPN 2 GHz RF power transistor
BFG10/X |BFG10X	NXP/PHILIPS	N/a	3000	avai	NPN 2 GHz RF power transistor
BFG10/X |BFG10X	NXP	N/a	3000	avai	NPN 2 GHz RF power transistor

BFG10/X ,NPN 2 GHz RF power transistorLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).SYMBOL PARAMETER CON ..
BFG10/X ,NPN 2 GHz RF power transistor
BFG10/X ,NPN 2 GHz RF power transistor
BFG10W ,NPN wideband transistorLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).SYMBOL PARAMETER CON ..
BFG11/X ,NPN 2 GHz RF power transistor
BFG11/X ,NPN 2 GHz RF power transistor
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BS62LV1027PCP55 , Very Low Power CMOS SRAM 128K X 8 bit
BS62LV1027PCP-55 , Very Low Power CMOS SRAM 128K X 8 bit
BS62LV1027PCP70 , Very Low Power CMOS SRAM 128K X 8 bit

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BFG10/X
NPN 2 GHz RF power transistor

Philips Semiconductors Product specification
NPN 2 GHz RF power transistor BFG10; BFG10/X
FEATURES High power gain High efficiency Small size discrete power amplifier 1.9 GHz operating area Gold metallization ensures
excellent reliability.
APPLICATIONS Common emitter class-AB
operation in hand-held radio
equipment at 1.9 GHz.
DESCRIPTION
NPN silicon planar epitaxial transistor
encapsulated in plastic, 4-pin
dual-emitter SOT143 package.
PINNING
MARKING
QUICK REFERENCE DATA
RF performance at Tamb =25 °C in a common-emitter test circuit (see Fig.7).
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note Ts is the temperature at the soldering point of the collector pin.
Philips Semiconductors Product specification
NPN 2 GHz RF power transistor BFG10; BFG10/X
THERMAL CHARACTERISTICS
Note Ts is the temperature at the soldering point of the collector pin.
CHARACTERISTICS =25 °C unless otherwise specified.
Philips Semiconductors Product specification
NPN 2 GHz RF power transistor BFG10; BFG10/X
APPLICATION INFORMATION
RF performance at Tamb =25 °C in a common-emitter test circuit (see Fig.7).
Ruggedness in class-AB operation
The BFG10 is capable of withstanding a load mismatch corresponding to VSWR=8: 1 through all phases, at rated
output power under pulsed conditions up to a supply voltage of 7 V, f= 1.9 GHz and a duty cycle of 1:8.
Philips Semiconductors Product specification
NPN 2 GHz RF power transistor BFG10; BFG10/X
SPICE parameters for the BFG10 crystal
Note These parameters have not been extracted,
the default values are shown.
List of components (see Fig.6)
Philips Semiconductors Product specification
NPN 2 GHz RF power transistor BFG10; BFG10/X
Test circuit information

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