BF999 ,Silicon N Channel MOSFET Triode (For high-frequency stages up to 300 MHz, preferably in FM applications)
BF999 ,Silicon N Channel MOSFET Triode (For high-frequency stages up to 300 MHz, preferably in FM applications)
BFC233620104 , Interference Suppression Film Capacitors MKP Radial Potted Type
BFG10/X ,NPN 2 GHz RF power transistorLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).SYMBOL PARAMETER CON ..
BFG10/X ,NPN 2 GHz RF power transistor
BFG10/X ,NPN 2 GHz RF power transistor
BS616LV4016EI-55 , Very Low Power/Voltage CMOS SRAM 256K X 16 bit
BS616LV4016EI-70 , Very Low Power/Voltage CMOS SRAM 256K X 16 bit
BS616LV4017EIG55 , Very Low Power CMOS SRAM 256K X 16 bit
BS616LV4017EIG-55 , Very Low Power CMOS SRAM 256K X 16 bit
BS616LV4017EIG70 , Very Low Power CMOS SRAM 256K X 16 bit
BS616LV4017EIP55 , Very Low Power CMOS SRAM 256K X 16 bit
BF999
Silicon N Channel MOSFET Triode (For high-frequency stages up to 300 MHz, preferably in FM applications)