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Partno	Mfg	Dc	Qty	Available	Descript
BF995	INFINEON	N/a	2573	avai	N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode

BF995 ,N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion ModeRev. 3, 20-Jan-99 1 (7)BF995Vishay SemiconductorsElectrical DC CharacteristicsT = 25

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BF995
N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode
BF995
Vishay Semiconductors
www.vishay.com
Document Number 85009
N–Channel Dual Gate MOS-Fieldeffect Tetrode,
Depletion Mode
Electrostatic sensitive device.
Observe precautions for handling.
Applications
Input- and mixer stages especially for FM- and VHF TV-tuners up to 300 MHz.
Features Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance3
BF995 Marking: MB
Plastic case (SOT 143)
1=Source, 2=Drain, 3=Gate 2, 4=Gate 1 21
Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified
Maximum Thermal Resistance
Tamb = 25 C, unless otherwise specified

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