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Partno	Mfg	Dc	Qty	Available	Descript
BF988	TFK	N/a	20	avai	N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode
BF988	SIEMENS	N/a	336	avai	N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode
BF988	*	N/a	15	avai	N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode
BF988	PHILIPS	N/a	10000	avai	N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode
BF988		N/a	2613	avai	N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode

BF988 ,N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode Document Number 850072 (8) Rev. 4, 08-Jul-99BF988Vishay SemiconductorsCommon Source S–ParametersV ..
BF988 ,N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion ModeAbsolute Maximum RatingsT = 25

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BF988
N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode
BF988
Vishay Semiconductors
www.vishay.com
Document Number 85007
N–Channel Dual Gate MOS-Fieldeffect Tetrode,
Depletion Mode
Electrostatic sensitive device.
Observe precautions for handling.
Applications
Input- and mixer stages especially VHF- and UHF- tuners.
Features Integrated gate protection diodes High cross modulation performance Low noise figure High gain High AGC-range Low feedback capacitance Low input capacitance
94 9307 96 12647
BF988 Marking: BF988
Plastic case (TO 50)
1 = Drain, 2 = Source, 3 = Gate 1, 4 = Gate 2 21
Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified
Maximum Thermal Resistance
Tamb = 25 C, unless otherwise specified

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