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Partno	Mfg	Dc	Qty	Available	Descript
BF964S	VISHAY	N/a	10000	avai	N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode

BF964S ,N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion ModeRev. 3, 20-Jan-99 1 (8)BF964SVishay SemiconductorsElectrical DC CharacteristicsT = 25

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BF964S
N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode
BF964S
Vishay Semiconductors
www.vishay.com
Document Number 85003
N–Channel Dual Gate MOS-Fieldeffect Tetrode,
Depletion Mode
Electrostatic sensitive device.
Observe precautions for handling.
Applications
Input- and mixer stages especially VHF TV-tuners.
Features Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance Low input capacitance
94 9307 96 12647
BF964S Marking: BF964S
Plastic case (TO 50)
1=Drain, 2=Source, 3=Gate 1, 4=Gate 2 21
Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified
Maximum Thermal Resistance
Tamb = 25 C, unless otherwise specified

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