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Partno	Mfg	Dc	Qty	Available	Descript
BF961A	VISHAY	N/a	4490	avai	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

BF961A ,N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion ModeRev. 1.5, 25-Nov-04 1BF961VISHAYVishay SemiconductorsElectrical DC CharacteristicsT = 25 °C, unless ..
BF964S ,N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion ModeRev. 3, 20-Jan-99 1 (8)BF964SVishay SemiconductorsElectrical DC CharacteristicsT = 25

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BF961A
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
BF961
Document Number 85002
Vishay Semiconductors
www.vishay.com
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Features Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance Low input capacitance
Applications
Input- and mixer stages especially for FM- and VHF
TV-tuners up to 300 MHz.
Mechanical Data
Case: TO-50 Plastic case
Weight: approx. 124 mg
Marking: BF961
Pinning:
1 = Drain, 2 = Source,
3 = Gate 1, 4 = Gate 2
Parts Table
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Maximum Thermal Resistance on glass fibre printed board (40 x 25 x 1.5) mm3 plated with 35 µm Cu

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