BF959 , 0.625W General Purpose NPN Plastic Leaded Transistor. 20V Vceo, 0.100A Ic, 35
BF959 , 0.625W General Purpose NPN Plastic Leaded Transistor. 20V Vceo, 0.100A Ic, 35
BF960 ,N-CHANNEL DUAL GATE MOS-FIELDEFFECT TETRODE.DEPLETION MODEApplications: Input- and Mixerstages especially for UHFTV-tuners up to 900 MHz
BF960 ,N-CHANNEL DUAL GATE MOS-FIELDEFFECT TETRODE.DEPLETION MODEot TELEFUNKEN ELECTRONIC alt p I manual: tltl0iil30 n .ALGGV r-agrt.sc '. -.1rEiuElFiglkllltlm elec ..
BF960 ,N-CHANNEL DUAL GATE MOS-FIELDEFFECT TETRODE.DEPLETION MODEFeatures:0 Integrated Gate protection diodes 0 High MD-range. High cross modulation performance q L ..
BF961 ,Trans RF MOSFET N-CH 20V 0.03A 4-Pin TO-50Rev. 3, 20-Jan-99 3 (7)Y – Forward Transadmittance ( mS ) I – Drain Current ( mA ) P – ..
BS107A ,N-channel enhancement mode vertical D-MOS transistorMAXIMUM RATINGSDRating Symbol Value UnitDrain−Source Voltage V 200 VdcDSGate−Source Voltage− Contin ..
BS107ARL1 ,Small Signal MOSFET 250 mAmps, 200 VoltsMaximum ratings applied to the device are individual stress limit values (not12normal operating con ..
BS107G ,Small Signal MOSFET 250 mAmps, 200 Volts2BS107, BS107A10 200180V = 0 VGS1605.0V = 10 VGS 250 mA1402.01201.0100C80iss100 mA0.560400.2Coss20C ..
BS108 ,Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level
BS108 ,Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level
BS108ZL1 ,Small Signal MOSFET 250 mAmps, 200 Volts, Logic LevelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
BF959
0.625W General Purpose NPN Plastic Leaded Transistor. 20V Vceo, 0.100A Ic, 35
