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BF909WR
N-channel dual-gate MOSFET
NXP Semiconductors Product specification
N-channel dual-gate MOS-FET BF909WR
FEATURES Specially designed for use at 5 V supply voltage Short channel transistor with high forward transfer
admittance to input capacitance ratio Low noise gain controlled amplifier up to 1 GHz Superior cross-modulation performance during AGC.
APPLICATIONS VHF and UHF applications with 3 to 7 V supply voltage
such as television tuners and professional
communications equipment.
DESCRIPTIONEnhancement type field-effect transistor in a plastic
microminiature SOT343R package. The transistor
consists of an amplifier MOS-FET with source and
substrate interconnected and an internal bias circuit to
ensure good cross-modulation performance during AGC.
QUICK REFERENCE DATA
NXP Semiconductors Product specification
N-channel dual-gate MOS-FET BF909WR
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).
Note Device mounted on a printed-circuit board.
NXP Semiconductors Product specification
N-channel dual-gate MOS-FET BF909WR
THERMAL CHARACTERISTICS
Notes Device mounted on a printed-circuit board. Ts is the temperature at the soldering point of the source lead.
STATIC CHARACTERISTICS =25 C; unless otherwise specified.
Note RG1 connects gate 1 to VGG =5V.
DYNAMIC CHARACTERISTICSCommon source; Tamb =25 C; VDS =5V; VG2-S =4V; ID=15 mA; unless otherwise specified.
NXP Semiconductors Product specification
N-channel dual-gate MOS-FET BF909WR
NXP Semiconductors Product specification
N-channel dual-gate MOS-FET BF909WR
