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BF909-BF909R
N-channel dual gate MOS-FETs
Philips Semiconductors
Philips Semiconductors Product specification
N-channel dual gate MOS-FETs BF909; BF909R
FEATURES Specially designed for use at 5 V supply voltage High forward transfer admittance Short channel transistor with high forward transfer
admittance to input capacitance ratio Low noise gain controlled amplifier up to 1 GHz Superior cross-modulation performance during AGC.
APPLICATIONS VHF and UHF applications with 3 to 7 V supply voltage
such as television tuners and professional
communications equipment.
DESCRIPTIONEnhancement type field-effect transistor in a plastic
microminiature SOT143 or SOT143R package. The
transistor consists of an amplifier MOS-FET with source
and substrate interconnected and an internal bias circuit to
ensure good cross-modulation performance during AGC.
PINNING
QUICK REFERENCE DATA
Philips Semiconductors Product specification
N-channel dual gate MOS-FETs BF909; BF909R
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).
Note Device mounted on a printed-circuit board.
Philips Semiconductors Product specification
N-channel dual gate MOS-FETs BF909; BF909R
THERMAL CHARACTERISTICS
Notes Device mounted on a printed-circuit board. Ts is the temperature at the soldering point of the source lead.
STATIC CHARACTERISTICS =25 °C; unless otherwise specified.
Note RG1 connects gate 1 to VGG=5 V; see Fig.18.
DYNAMIC CHARACTERISTICSCommon source; Tamb =25 °C; VDS=5 V; VG2-S=4 V; ID=15 mA; unless otherwise specified.
Philips Semiconductors Product specification
N-channel dual gate MOS-FETs BF909; BF909R
Philips Semiconductors Product specification
N-channel dual gate MOS-FETs BF909; BF909R
