BF908R ,Dual-gate MOS-FETsapplications with 12 V supply voltage,1 2such as television tuners and professionals,bcommunication ..
BF908R ,Dual-gate MOS-FETs
BF909 ,N-channel dual gate MOS-FETsFEATURES transistor consists of an amplifier MOS-FET with sourceand substrate interconnected and an ..
BF909AR , RF Manual 16th edition
BF909AR , RF Manual 16th edition
BF909R ,N-channel dual gate MOS-FETsDISCRETE SEMICONDUCTORSDATA SHEETBF909; BF909RN-channel dual gate MOS-FETs1995 Apr 25Product specifi ..
BS05C1HFAA , Magnetic Pattern Recognition Sensors
BS08E , TRIGGER APPLICATION LEAD MOUNT TYPE, PLANE-MOUNTED TYPE
BS107 ,Enhancement-Mode MOSFET TransistorsVN2010L/BS107Vishay SiliconixN-Channel 200-V (D-S) MOSFETs Part Number V Min (V) r Max ..
BS107A ,N-channel enhancement mode vertical D-MOS transistorMAXIMUM RATINGSDRating Symbol Value UnitDrain−Source Voltage V 200 VdcDSGate−Source Voltage− Contin ..
BS107ARL1 ,Small Signal MOSFET 250 mAmps, 200 VoltsMaximum ratings applied to the device are individual stress limit values (not12normal operating con ..
BS107G ,Small Signal MOSFET 250 mAmps, 200 Volts2BS107, BS107A10 200180V = 0 VGS1605.0V = 10 VGS 250 mA1402.01201.0100C80iss100 mA0.560400.2Coss20C ..
BF908R
Dual-gate MOS-FETs
Philips Semiconductors Product specification
Dual-gate MOS-FETs BF908; BF908R
FEATURES High forward transfer admittance Short channel transistor with high forward transfer
admittance to input capacitance ratio Low noise gain controlled amplifier up to 1 GHz.
APPLICATIONS VHF and UHF applications with 12 V supply voltage,
such as television tuners and professional
communications equipment.
DESCRIPTIONDepletion type field-effect transistor in a plastic
microminiature SOT143 or SOT143R package. The
transistors are protected against excessive input voltage
surges by integrated back-to-back diodes between gates
and source.
PINNING
QUICK REFERENCE DATA
Philips Semiconductors Product specification
Dual-gate MOS-FETs BF908; BF908R
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).
Note Device mounted on a printed-circuit board.
Philips Semiconductors Product specification
Dual-gate MOS-FETs BF908; BF908R
THERMAL CHARACTERISTICS
Note Device mounted on a printed-circuit board.
STATIC CHARACTERISTICS =25 °C; unless otherwise specified.
DYNAMIC CHARACTERISTICSCommon source; Tamb =25 °C; VDS =8V; VG2-S =4V; ID=15 mA; unless otherwise specified.
Philips Semiconductors Product specification
Dual-gate MOS-FETs BF908; BF908R
Philips Semiconductors Product specification
Dual-gate MOS-FETs BF908; BF908R
Table 1 Scattering parameters
Table 2 Noise data
