BF904 ,N-channel dual gate MOS-FETsAPPLICATIONS• VHF and UHF
BF904 ,N-channel dual gate MOS-FETsFEATURES and substrate interconnected and an internal bias circuit toensure good cross-modulation p ..
BF904 ,N-channel dual gate MOS-FETsBF904; BF904RN-channel dual gate MOS-FETsRev. 06 — 13 November 2007 Product data sheetIMPORTANT NOT ..
BF904AR ,N-channel dual-gate MOSFETapplications with3 to 7 V supply voltage such astelevision tuners and professionalhandbook, 2 colum ..
BF904AR ,N-channel dual-gate MOSFETapplications with3 to 7 V supply voltage such astelevision tuners and professionalhandbook, 2 colum ..
BF904R ,N-channel dual-gate MOSFETFEATURES and substrate interconnected and an internal bias circuit toensure good cross-modulation p ..
BS05C1HFAA , Magnetic Pattern Recognition Sensors
BS08E , TRIGGER APPLICATION LEAD MOUNT TYPE, PLANE-MOUNTED TYPE
BS107 ,Enhancement-Mode MOSFET TransistorsVN2010L/BS107Vishay SiliconixN-Channel 200-V (D-S) MOSFETs Part Number V Min (V) r Max ..
BS107A ,N-channel enhancement mode vertical D-MOS transistorMAXIMUM RATINGSDRating Symbol Value UnitDrain−Source Voltage V 200 VdcDSGate−Source Voltage− Contin ..
BS107ARL1 ,Small Signal MOSFET 250 mAmps, 200 VoltsMaximum ratings applied to the device are individual stress limit values (not12normal operating con ..
BS107G ,Small Signal MOSFET 250 mAmps, 200 Volts2BS107, BS107A10 200180V = 0 VGS1605.0V = 10 VGS 250 mA1402.01201.0100C80iss100 mA0.560400.2Coss20C ..
BF904
N-channel dual gate MOS-FETs
Philips Semiconductors Product specification
N-channel dual gate MOS-FETs BF904; BF904R
FEATURES Specially designed for use at 5 V supply voltage Short channel transistor with high transfer admittance to
input capacitance ratio Low noise gain controlled amplifier up to 1 GHz Superior cross-modulation performance during AGC.
APPLICATIONS VHF and UHF applications with 3 to 7 V supply voltage
such as television tuners and professional
communications equipment.
DESCRIPTIONEnhancement type field-effect transistor in a plastic
microminiature SOT143B and SOT143R package. The
transistor consists of an amplifier MOS-FET with source
and substrate interconnected and an internal bias circuit to
ensure good cross-modulation performance during AGC.
PINNING
QUICK REFERENCE DATA
Philips Semiconductors Product specification
N-channel dual gate MOS-FETs BF904; BF904R
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).
Note Device mounted on a printed-circuit board.
Philips Semiconductors Product specification
N-channel dual gate MOS-FETs BF904; BF904R
THERMAL CHARACTERISTICS
Notes Device mounted on a printed-circuit board. Ts is the temperature at the soldering point of the source lead.
STATIC CHARACTERISTICS =25 °C unless otherwise specified.
Note RG1 connects gate 1 to VGG=5 V; see Fig.20.
DYNAMIC CHARACTERISTICSCommon source; Tamb =25 °C; VDS=5 V; VG2-S=4 V; ID=10 mA; unless otherwise specified.
Philips Semiconductors Product specification
N-channel dual gate MOS-FETs BF904; BF904R
Philips Semiconductors Product specification
N-channel dual gate MOS-FETs BF904; BF904R
Philips Semiconductors Product specification
N-channel dual gate MOS-FETs BF904; BF904R
Philips Semiconductors Product specification
N-channel dual gate MOS-FETs BF904; BF904R
