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BF824
PNP medium frequency transistor
Philips Semiconductors Product specification
PNP medium frequency transistor BF824
FEATURES Low current (max. 25 mA) Low voltage (max. 30V).
APPLICATIONS RF stages in FM front-ends in common base
configuration.
DESCRIPTIONPNP medium frequency transistor in a SOT23 plastic
package.
MARKING
Note∗=p: Made in Hong Kong.=t: Made in Malaysia.
PINNING
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).
Note Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Note Transistor mounted on an FR4 printed-circuit board.
Philips Semiconductors Product specification
PNP medium frequency transistor BF824
CHARACTERISTICS =25 °C unless otherwise specified.
Philips Semiconductors Product specification
PNP medium frequency transistor BF824
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads SOT23
Philips Semiconductors Product specification
PNP medium frequency transistor BF824
DEFINITIONS
LIFE SUPPORT APPLICATIONSThese products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Philips Semiconductors Product specification
PNP medium frequency transistor BF824
NOTES
