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BF823 from PHILIPS

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BF823

Manufacturer: PHILIPS

Surface mount Si-Epitaxial PlanarTransistors

Partnumber Manufacturer Quantity Availability
BF823 PHILIPS 29670 In Stock

Description and Introduction

Surface mount Si-Epitaxial PlanarTransistors The part BF823 is manufactured by PHILIPS. It is an NPN transistor designed for general-purpose amplifier and switching applications. Key specifications include:

- **Type**: NPN transistor
- **Collector-Base Voltage (VCBO)**: 30V
- **Collector-Emitter Voltage (VCEO)**: 25V
- **Emitter-Base Voltage (VEBO)**: 5V
- **Collector Current (IC)**: 500mA
- **Power Dissipation (Ptot)**: 625mW
- **Transition Frequency (fT)**: 200MHz
- **Gain Bandwidth Product (hFE)**: 40-250 (depending on operating conditions)
- **Package**: TO-92 (plastic encapsulation)  

These are the factual specifications for the BF823 transistor from PHILIPS.

Partnumber Manufacturer Quantity Availability
BF823 NXP/PHILIPS 3000 In Stock

Description and Introduction

Surface mount Si-Epitaxial PlanarTransistors The part BF823 is manufactured by NXP/Philips. Below are its specifications:

- **Type**: NPN Transistor
- **Application**: High-frequency amplifier
- **Collector-Base Voltage (VCBO)**: 30V
- **Collector-Emitter Voltage (VCEO)**: 15V
- **Emitter-Base Voltage (VEBO)**: 3V
- **Collector Current (IC)**: 50mA
- **Total Power Dissipation (Ptot)**: 250mW
- **Transition Frequency (fT)**: 600MHz
- **Operating Temperature Range**: -65°C to +150°C
- **Package**: SOT23 (Surface-Mount)

This information is based on the manufacturer's datasheet.

Partnumber Manufacturer Quantity Availability
BF823 NXP/PHILIPS 12000 In Stock

Description and Introduction

Surface mount Si-Epitaxial PlanarTransistors The BF823 is a transistor manufactured by NXP/Philips. Below are its key specifications:

- **Type**: NPN Silicon RF Transistor  
- **Application**: Designed for RF amplifier applications, particularly in VHF/UHF bands.  
- **Package**: SOT143B (Surface Mount)  
- **Collector-Base Voltage (VCB)**: 12V  
- **Collector-Emitter Voltage (VCE)**: 8V  
- **Emitter-Base Voltage (VEB)**: 3V  
- **Collector Current (IC)**: 30mA  
- **Total Power Dissipation (Ptot)**: 250mW  
- **Transition Frequency (fT)**: 5.5GHz (typical)  
- **Noise Figure**: Low noise performance suitable for RF amplification.  

These specifications are based on the manufacturer's datasheet. For detailed performance graphs and additional parameters, refer to the official NXP/Philips documentation.

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