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BF660W
PNP Silicon RF transistor
BF 660W
PNP Silicon RF Transistor• For VHF oscillator applications
Maximum Ratings
Thermal Resistance
BF 660W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
DC Characteristics
AC Characteristics
BF 660W
Total power dissipation Ptot = f (TA*, TS)
* Package mounted on epoxy20406080100120°C150A,TS
50
100
150
200
mW
300 tot
Permissible Pulse Load RthJS = f (tp)10 10 10 10
K/W thJS
Permissible Pulse Load Ptotmax/PtotDC = f (tp)10 10 10
- Ptotmax/PtotDC
BF 660W
Transition frequency fT = f (IC)
Collector-base capacitance Ccb = f (VCB)
:
www.ic-phoenix.com
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