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BF660
PNP Silicon RF transistor
SIEMENS
PNP Silicon RF Transistor
o For VHF oscillator applications
BF 660
Type Marking Ordering Code Pin Configuration Package')
(tape and reel) 1 2 3
BF 660 LEs Q62702-F982 B E C SOT-23
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage VCEo 30 V
Collector-base voltage VCBo 40
Emitter-base voltage VEBO 4
Collector current Ic 25 mA
Emitter current hs 30
Total power dissipation, TA s: 25 ( Ptot 280 mW
Junction temperature T, 150 (
Storage temperature range Tstg - 65 ... + 150
Thermal Resistance
Junction - ambient2) RthJA f 450 K/W
mled information see chapter Package Outlines.
2) Package mounted on alumina 15 mm X 16.7 mm X 0.7 mm.
1 07.94
Semiconductor Group
SIEMENS; BF 660
Electrical Characteristics
at TA = 25 °C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage V(BR)CEO 30 - - V
Ic = 1 mA, hs = O
Collector-base breakdown voltage V(BR)CBO 40 - -
IC = 10 11A, IE = 0
Emitter-base breakdown voltage V(BR) EBO 4 - -
IE=10uA,IC=0
Collector cutoff current Icao - - 50 nA
Vca=20V,IE=O
DC current gain hFE 30 - - -
IC=3mA, VCE-- 10V
AC Characteristics
Transition frequency fr - 700 - MHz
10 = 5 mA, VCE = 10V,f= 100 MHz
Collector-base capacitance ch - 0.6 - pF
VCB=1OV,VBE=OV,f=1MHZ
Collector-emitter capacitance Cce - 0.28 -
VCE=1OV,VBE=0V,f=1MHZ
Semiconductor Group 2
