BF556C ,N-channel FETAPPLICATIONS• Impedance converters in e.g. electret microphones and3infra-red detectorsTop viewMAM0 ..
BF569 ,PNP Silicon RF Transistor (fOR OSCILLATORS, MIXERS AND SELF-OSCILLATING MIXER STAGES IN uhf tv TUNERS)
BF569 ,PNP Silicon RF Transistor (fOR OSCILLATORS, MIXERS AND SELF-OSCILLATING MIXER STAGES IN uhf tv TUNERS)Absolute Maximum RatingsT = 25
BF556C
N-channel silicon junction field-effect transistors
Philips Semiconductors Product specification
N-channel silicon junction
field-effect transistors BF556A; BF556B; BF556C
FEATURES Low leakage level (typ. 500 fA) High gain Low cut-off voltage.
APPLICATIONS Impedance converters in e.g. electret microphones and
infra-red detectors VHF amplifiers in oscillators and mixers.
DESCRIPTIONN-channel symmetrical silicon junction field-effect
transistors in a SOT23 package.
PINNING - SOT23
QUICK REFERENCE DATA
Philips Semiconductors Product specification
N-channel silicon junction
field-effect transistors BF556A; BF556B; BF556C
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).
Note Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain
lead10 mm2.
THERMAL CHARACTERISTICS
Note Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain
lead10 mm2.
STATIC CHARACTERISTICS =25 °C; unless otherwise specified.
Philips Semiconductors Product specification
N-channel silicon junction
field-effect transistors BF556A; BF556B; BF556C
DYNAMIC CHARACTERISTICSTamb =25 °C; unless otherwise specified.
Philips Semiconductors Product specification
N-channel silicon junction
field-effect transistors BF556A; BF556B; BF556C
Philips Semiconductors Product specification
N-channel silicon junction
field-effect transistors BF556A; BF556B; BF556C
