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BF545B-BF545C
N-channel silicon junction field-effect transistors
Philips Semiconductors Product specification
N-channel silicon junction
field-effect transistors BF545A; BF545B; BF545C
FEATURES Low leakage level (typ. 500 fA) High gain Low cut-off voltage (max. 2.2 V for BF545A).
APPLICATIONS Impedance converters in e.g. electret microphones and
infra-red detectors VHF amplifiers in oscillators and mixers.
DESCRIPTIONN-channel symmetrical silicon junction field-effect
transistors in a SOT23 package.
PINNING - SOT23
QUICK REFERENCE DATA
Philips Semiconductors Product specification
N-channel silicon junction
field-effect transistors BF545A; BF545B; BF545C
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).
Note Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain
lead10 mm2.
Philips Semiconductors Product specification
N-channel silicon junction
field-effect transistors BF545A; BF545B; BF545C
THERMAL CHARACTERISTICS
Note Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain
lead10 mm2.
STATIC CHARACTERISTICS =25 °C; unless otherwise specified.
Philips Semiconductors Product specification
N-channel silicon junction
field-effect transistors BF545A; BF545B; BF545C
DYNAMIC CHARACTERISTICSTamb =25 °C; unless otherwise specified.
Philips Semiconductors Product specification
N-channel silicon junction
field-effect transistors BF545A; BF545B; BF545C
