BF543 ,RF-MOSFETapplications
BF543
RF-MOSFET
BF543
Silicon N-Channel MOSFET Triode For high-frequency stages up to 300 MHz
preferably in FM applicationsIDSS = 4mA, gfs = 12mS
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Maximum Ratings
Thermal ResistanceFor calculation of RthJA please refer to Application Note Thermal Resistance
BF543
Electrical Characteristics at TA = 25 °C, unless otherwise specified.
DC characteristics
AC characteristics
BF543
Output characteristics I)0
EHT07026VV20GS=
0.2
Total power dissipation Ptot = f(TS)
50
100
150
200
300
tot
Gate transconductance gfs = f (VGS)DS = 10, I = 4mA, f = 1kHz0fs
Drain current ID = f (VGS) = 10V0
EHT07028
BF543
Gate input capacitance C)DS = 10, I
-0.10gssVV0.1
Output capacitance C)0
EHT07030
CdssV
51015V
Reverse transfer capacitancedg = f (VDS)GS = 0, I0
Cdg
Gate input admittance y11sDS = 10, IDSS = 4mA, VGS = 0
(source circuit)0
EHT07032
0.10.20.30.4mS0.5
MHz
BF543
Gate forward transfer admittance yDS = 10V,
(source circuit)-10
21sg
21s
= 800f700
600
500
510mS15
MHzMHz
MHz
MHz
Output admittance y(source circuit)0
EHT07034
22sg
0.10.20.30.4mS0.5
MHz
MHz
MHz
MHz
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