BF513 ,N-channel silicon FETapplications upBF513 = S9pto the v.h.f. range in hybrid thick andthin-film circuits. Special
BF513 ,N-channel silicon FET DISCRETE SEMICONDUCTORS DATA SHEETBF510 to 513N-channel silicon field-effect transistorsProduct sp ..
BF517 ,RF-Bipolarapplications in TV-tuners21VPS05161Type Marking Pin Configuration PackageBF 517 LRs 1 = B 2 = E 3 = ..
BF543 ,RF-MOSFETapplications
BF510-BF511-BF513
N-channel silicon FET
NXP Semiconductors Product specification
N-channel silicon field-effect transistors BF510 to 513
DESCRIPTIONAsymmetrical N-channel planar
epitaxial junction field-effect
transistors in the miniature plastic
envelope intended for applications up
to the v.h.f. range in hybrid thick and
thin-film circuits. Special features are
the low feedback capacitance and the
low noise figure. These features
make the product very suitable for
applications such as the r.f. stages in
f.m. portables (BF510), car radios
(BF511) and mains radios (BF512) or
the mixer stage (BF513).
PINNING - SOT23 gate = drain = source
MARKING CODEBF510= S6p
BF511= S7p
BF512= S8p
BF513= S9p
QUICK REFERENCE DATADrain-source voltage VDS max. 20 V
Drain current (DC or average) ID max. 30 mA
Total power dissipation
up to Tamb =40 CPtot max. 250 mW
NXP Semiconductors Product specification
N-channel silicon field-effect transistors BF510 to 513
RATINGSLimiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCE
Note Mounted on a ceramic substrate of 8 mm 10 mm 0.7 mm.
STATIC CHARACTERISTICSTamb= 25 C
Drain-source voltage VDS max. 20V
Drain-gate voltage (open source) VDGO max. 20V
Drain current (DC or average) ID max. 30 mA
Gate current IG max. 10 mA
Total power dissipation up to Tamb =40 C (note 1) Ptot max. 250 mW
Storage temperature range Tstg 65 to 150 C
Junction temperature Tj max. 150 C
From junction to ambient (note 1) Rth j-a = 430 K/W
Gate cut-off current
VGS= 0.2 V; VDS =0 IGSS nA
Gate-drain breakdown voltage =0; ID =10 A V(BR)GDO V
Drain current VDS =10 V; VGS =0 IDSS
Gate-source cut-off voltage =10 A; VDS =10 V V(P)GS typ.V
NXP Semiconductors Product specification
N-channel silicon field-effect transistors BF510 to 513
DYNAMIC CHARACTERISTICS
Measuring conditions (common source): VDS =10 V; VGS = 0; Tamb =25 C for BF510 and BF511
VDS =10 V; ID = 5 mA; Tamb =25 C for BF512 and BF513
y-parameters (common source)Input capacitance at f = 1 MHz Cis pF
Input conductance at f = 100 MHz gis typ. S
Feedback capacitance at f = 1 MHz Crs typ. pF pF
Transfer admittance at f = 1 kHz yfs mS
VGS= 0 instead of ID =5 mA yfs mS
Transfer admittance at f = 100 MHz yfs typ. mS
Output capacitance at f = 1 MHz Cos pF
Output conductance at f = 1 MHz gos S
Output conductance at f = 100 MHz gos typ. S
Noise figure at optimum source admittance =1 mS; BS =3 mS;
f = 100 MHz F typ. dB
NXP Semiconductors Product specification
N-channel silicon field-effect transistors BF510 to 513
NXP Semiconductors Product specification
N-channel silicon field-effect transistors BF510 to 513
