BF511 ,N-channel silicon field-effect transistorsfeatures arethe low feedback capacitance and thelow noise figure. These
BF511 ,N-channel silicon field-effect transistorsfeatures are the low feedback capacitance and the low noise figure. These
BF511 ,N-channel silicon field-effect transistorsapplications up BF513 = S9pto the v.h.f. range in hybrid thick and thin-film circuits. Special
BF512 ,N-channel silicon field-effect transistorsapplications such as the r.f. stages inf.m. portables (BF510), car radios3handbook, halfpage(BF511) ..
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BF510-BF511-BF512-BF513
N-channel silicon field-effect transistors
Philips Semiconductors Product specification
N-channel silicon field-effect transistors BF510 to 513
DESCRIPTIONAsymmetrical N-channel planar
epitaxial junction field-effect
transistors in the miniature plastic
envelope intended for applications up
to the v.h.f. range in hybrid thick and
thin-film circuits. Special features are
the low feedback capacitance and the
low noise figure. These features
make the product very suitable for
applications such as the r.f. stages in
f.m. portables (BF510), car radios
(BF511) and mains radios (BF512) or
the mixer stage (BF513).
PINNING - SOT23 = gate = drain = source
MARKING CODEBF510= S6p
BF511= S7p
BF512= S8p
BF513= S9p
QUICK REFERENCE DATADrain-source voltage VDS max. 20 V
Drain current (DC or average) ID max. 30 mA
Total power dissipation
up to Tamb =40 °CPtot max. 250 mW
Philips Semiconductors Product specification
N-channel silicon field-effect transistors BF510 to 513
RATINGSLimiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCE
Note Mounted on a ceramic substrate of 8 mm× 10 mm× 0.7 mm.
STATIC CHARACTERISTICSTamb =25°C
Drain-source voltage VDS max. 20V
Drain-gate voltage (open source) VDGO max. 20V
Drain current (DC or average) ID max. 30 mA
Gate current ±IG max. 10 mA
Total power dissipation up to Tamb =40 °C (note 1) Ptot max. 250 mW
Storage temperature range Tstg −65 to+ 150 °C
Junction temperature Tj max. 150 °C
From junction to ambient (note 1) Rth j-a = 430 K/W
Gate cut-off current
−VGS= 0.2 V; VDS =0 −IGSS < nA
Gate-drain breakdown voltage =0; −ID =10μA −V(BR)GDO >V
Drain current >VDS= 10 V; VGS =0 IDSS
Gate-source cut-off voltage =10 μA; VDS= 10 V −V(P)GS typ.V
Philips Semiconductors Product specification
N-channel silicon field-effect transistors BF510 to 513
DYNAMIC CHARACTERISTICS
Measuring conditions (common source): VDS= 10 V; VGS = 0; Tamb =25°C for BF510 and BF511
VDS= 10 V; ID = 5 mA; Tamb =25°C for BF512 and BF513
y-parameters (common source)Input capacitance at f = 1 MHz Cis < pF
Input conductance at f = 100 MHz gis typ. μS
Feedback capacitance at f = 1 MHz Crs typ. pF pF
Transfer admittance at f = 1 kHz yfs > mS
VGS= 0 instead of ID= 5 mA yfs > mS
Transfer admittance at f = 100 MHz yfs typ. mS
Output capacitance at f = 1 MHz Cos < pF
Output conductance at f = 1 MHz gos < μS
Output conductance at f = 100 MHz gos typ. μS
Noise figure at optimum source admittance= 1 mS; −BS= 3 mS;
f = 100 MHz F typ. dB
Philips Semiconductors Product specification
N-channel silicon field-effect transistors BF510 to 513
Philips Semiconductors Product specification
N-channel silicon field-effect transistors BF510 to 513
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads SOT23
