BF506 ,PNP Silicon RF TransistorCharacteristicsCollector-emitter breakdown voltage V(BR) CE0 35 – – VIC = 2 mACollector-base breakd ..
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BF506
PNP Silicon RF Transistor
SIEMENS
PNP Silicon RF Transistor BF 506
o For VHF mixer and oscillator stages
tttt 2
"tiiciiti; 3
Type Marking Ordering Code Pin Configuration Package')
BF 506 - Q62702-F534 C B TO-92
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage VCEo 35 V
Collector-base voltage VCBo 40
Emitter-base voltage VEBO 4
Collector current Ic 30 mA
Base current hs 5
Total power dissipation, TA s: 45 ( Ptot 300 mW
Junction temperature T, 150 (
Storage temperature range Tstg - 55 ... + 150
Thermal Resistance
Junction - ambient RthJA f 350 K/W
1) For detailed information see chapter Package Outlines.
Semiconductor Group
SIEMENS; BF 506
Electrical Characteristics
at TA = 25 °C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage V(BR)CEO 35 - - V
Ic = 2 mA
Collector-base breakdown voltage V(BR)CBO 40 - -
Ic = 10 11A
Emitter-base breakdown voltage V(BR) E80 4 - -
hs = 10 wA
Collector cutoff current 1030 - - 100 nA
VCB = 20 V
DC current gain hFE 25 - - -
Ic=3mA, VCE=10V
AC Characteristics
Transition frequency f - 550 - MHz
Ic = 2 mA, VCE = 10 V,f= 100 MHz
Collector-emitter capacitance Cce - 0.12 - V
Vcs=10V,VBE=OV,f=1MHz
Noise figure F - 3 - dB
h: = 2 mA, Vca =10V,f= 200 MHz
Rs = 60 Q
Semiconductor Group 2
