BF259 ,Leaded Small Signal Transistor General PurposeABSOLUTE MAXIMUM RATINGSValueSymbol Parameter UnitBF257 BF258 BF259V Collector-base Voltage (I = 0) ..
BF259 ,Leaded Small Signal Transistor General PurposeBF257BF258-BF259HIGH VOLTAGE VIDEO AMPLIFIERSDESCRIPTIONThe BF257, BF258 and BF259 are silicon plan ..
BF337 , Bipolar NPN Device in a Hermetically sealed TO39
BF337 , Bipolar NPN Device in a Hermetically sealed TO39
BF3506TV ,FULL 50-60Hz RECTIFICATION BRIDGEELECTRICAL CHARACTERISTICS (per diode unless specified)Symbol Parameter Value UnitV Repetitive peak ..
BF3510TV ,FULL 50-60HZ RECTIFICATION BRIDGEELECTRICAL CHARACTERISTICS (per diode unless specified)Symbol Parameter Value UnitV Repetitive peak ..
BR9040F , 1, 2, and 4k bit EEPROMs for direct connection to serial ports
BR9080ARFV-W , 8k, 16k bit EEPROMs for direct connection to serial ports
BR9080F , 8k, 16k bit EEPROMs for direct connection to serial ports
BR93A46RFJ-WE2 , High Reliability Serial EEPROMs High Reliability Series
BR93A56RF-WE2 , High Reliability Serial EEPROMs High Reliability Series
BR93A66F-WE2 , High Reliability Serial EEPROMs High Reliability Series
BF257-BF258-BF259
Leaded Small Signal Transistor General Purpose
BF2 57
BF258-BF259HIGH VOLTAGE VIDEO AMPLIFIERS
DESCRIPTIONThe BF257, BF258 and BF259 are silicon planar
epitaxial NPN transistorsin Jedec TO-39 metal
case. They are particularly designed forvideooutput
stagesin CTV and MTV sets, classA audio output
stages and drivers for horizontal deflection circuits.
ABSOLUTE MAXIMUM RATINGS
ValueSymbol Parameter
BF257 BF258 BF259
UnitVCBO Collector-base Voltage(IE=0) 160 250 300 V
VCEO Collector-emitter Voltage(IB=0) 160 250 300 V
VEBO Emitter-base Voltage(IC =0) 5 V Collector Current 100 mA
ICM Collector Peak Current 200 mA
Ptot Total Power Dissipationat Tamb≤50 °C5 W
INTERNAL SCHEMATIC DIAGRAM
TO-39
ELECTRICAL CHARACTERISTICS (Tamb =25°C unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. UnitICBO Collector Cutoff Current
(IE =0)
for
BF257for
BF258for
BF259VCB= 100V
VCB= 200V
VCB= 250V
V(BR) CBO Collector-base
Breakdown Voltage
(IE =0) =100μA
for
BF257for
BF258for
BF259V(BR)CEO* Collector-emitter
Breakdown Voltage
(IB =0) =10 mA
for
BF257for
BF258for
BF259V(BR) EBO Emittter-base
Breakdown Voltage
(IC =0) =100 μA5 V
VCE (sat)* Collector-emitter
Saturation Voltage IC =30 mA IB =6 mA 1 V
hFE* DC Current Gain IC =30 mA VCE =10V 25 Transition Frequency IC =15 mA VCE =10V 90 MHz
Cre Reverse Capacitance IC =01 MHz
VCE =30V 3pF Pulsed: pulse duration= 300μs, duty cycle=1%. Current Gain.
THERMAL DATARth j-case
Rth j-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
°C/W
°C/W
BF257-BF258-BF259
Collector Cutoff Current. Collector-base Capacitance.
Transition Frequency. Power Rating Chart.
Safe Operating Area.
BF257-BF258-BF259
DIM. inch
MIN. TYP. MAX. MIN. TYP. MAX. 12.7 0.500 0.49 0.019 6.6 0.260 8.5 0.334 9.4 0.370 5.08 0.200 1.2 0.047 0.9 0.035
L45o (typ.)
E
TO39 MECHANICAL DATA
BF257-BF258-BF259
Information furnishedis believedtobe accurate and reliable. However, SGS-THOMSON Microelectronics assumesno responsabilityforthe
consequencesof useof such informationnor forany infringementof patentsor other rightsof third partieswhich mayresults fromits use.No
license isgrantedby implication orotherwise under anypatentor patentrights ofSGS-THOMSON Microelectronics.Specificationsmentionedthis publicationare subjectto change without notice. This publicationsupersedesand replacesall information previously supplied.
SGS-THOMSON Microelectronicsproductsarenot authorizedforuse ascriticalcomponents inlife supportdevices orsystemswithoutexpress
written approvalof SGS-THOMSONMicroelectonics. 1994 SGS-THOMSON Microelectronics-All Rights Reserved
SGS-THOMSON Microelectronics GROUPOF COMPANIES
BF257-BF258-BF259
This datasheet has been :
www.ic-phoenix.com
Datasheets for electronic components.
