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BF245PHILIPSN/a2900avaiN-Channel Amplifiers


BF245 ,N-Channel AmplifiersBF245A/BF245B/BF245CBF245A/BF245B/BF245CN-Channel Amplifiers This device is designed for VHF/UHF a ..
BF245A ,N-Channel RF Amplifier
BF245A ,N-Channel RF AmplifierBF245A/BF245B/BF245CBF245A/BF245B/BF245CN-Channel Amplifiers• This device is designed for VHF/UHF a ..
BF245A ,N-Channel RF AmplifierBF245A/BF245B/BF245CBF245A/BF245B/BF245CN-Channel Amplifiers• This device is designed for VHF/UHF a ..
BF245A ,N-Channel RF Amplifier
BF245B ,N-Channel RF AmplifierBF245A/BF245B/BF245CBF245A/BF245B/BF245CN-Channel Amplifiers• This device is designed for VHF/UHF a ..
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BF245
N-Channel Amplifiers
BF245A/BF245B/BF245C BF245A/BF245B/BF245C N-Channel Amplifiers  This device is designed for VHF/UHF amplifiers.  Sourced from process 50. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Drain-Gate Voltage 30 V DG V Gate-Source Voltage -30 V GS I Forward Gate Current 10 mA GF P Total Device Dissipation @T =25°C 350 mW D A Derate above 25°C 2.8 mW/°C T T Operating and Storage Junction Temperature Range - 55 ~ 150 °C J, STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units Off Characteristics V Gate-Source Breakdown Voltage V = 0, I = 1μA-30 V (BR)GSS DS G V Gate-Source BF245A V = 15V, I = 200μA-0.4 -2.2 V GS DS D BF245B -1.6 -3.8 BF245C -3.2 -7.5 V (off) Gate-Source Cut-off Voltage V = 15V, I = 10nA -0.5 -8 V GS DS D I Gate Reverse Current V = -20V, V = 0 -5 nA GSS GS GS On Characteristics I Zero-Gate Voltage Drain Current DSS BF245A V = 15V, V = 0 2 6.5 mA GS GS BF245B 6 15 BF245C 12 25 On Characteristics g Common Source Forward V = 15V, V = 0, f = 1KHz 3 6.5 mmhos fs GS GS Transconductance ©2003 Rev. A1, June 2003
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