BF244B ,N-Channel RF Amplifierapplicationsoperating up to 450 MHz, and for analog switching requiring lowcapacitance. Sourced fr ..
BF244C ,N-Channel RF Amplifierapplicationsoperating up to 450 MHz, and for analog switching requiring lowcapacitance. Sourced fr ..
BF245 ,N-Channel AmplifiersBF245A/BF245B/BF245CBF245A/BF245B/BF245CN-Channel Amplifiers This device is designed for VHF/UHF a ..
BF245A ,N-Channel RF Amplifier
BF245A ,N-Channel RF AmplifierBF245A/BF245B/BF245CBF245A/BF245B/BF245CN-Channel Amplifiers• This device is designed for VHF/UHF a ..
BF245A ,N-Channel RF AmplifierBF245A/BF245B/BF245CBF245A/BF245B/BF245CN-Channel Amplifiers• This device is designed for VHF/UHF a ..
BR9010 , 1, 2, and 4k bit EEPROMs for direct connection to serial ports
BR9010 , 1, 2, and 4k bit EEPROMs for direct connection to serial ports
BR9010FV , 1, 2, and 4k bit EEPROMs for direct connection to serial ports
BR9016RFV , 8k, 16k bit EEPROMs for direct connection to serial ports
BR9040F , 1, 2, and 4k bit EEPROMs for direct connection to serial ports
BR9080ARFV-W , 8k, 16k bit EEPROMs for direct connection to serial ports
BF244B
N-Channel RF Amplifier
BF244A / BF244B / BF244C BF244A BF244B BF244C S TO-92 G D N-Channel RF Amplifier This device is designed for RF amplifier and mixer applications operating up to 450 MHz, and for analog switching requiring low capacitance. Sourced from Process 50. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 30 V V Gate-Source Voltage - 30 V GS I Drain Current 50 mA D I Forward Gate Current 10 mA GF Storage Temperature Range -55 to +150 T °C stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units BF244A / BF244B / BF244C P Total Device Dissipation 350 mW D Derate above 25 C 2.8 mW/ C ° ° R Thermal Resistance, Junction to Case 125 °C/W θJC Thermal Resistance, Junction to Ambient 357 R °C/W θJA 1997
