BF240 ,NPN Radio Frequency TransistorBF240BF240NPN RF TransistorTO-9211. Collector 2. Emitter 3. BaseAbsolute Maximum Ratings* T =25° ..
BF244A ,N-Channel RF Amplifierapplications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25°C u ..
BF244A ,N-Channel RF Amplifierapplicationsoperating up to 450 MHz, and for analog switching requiring lowcapacitance. Sourced fr ..
BF244B ,N-Channel RF Amplifierapplicationsoperating up to 450 MHz, and for analog switching requiring lowcapacitance. Sourced fr ..
BF244C ,N-Channel RF Amplifierapplicationsoperating up to 450 MHz, and for analog switching requiring lowcapacitance. Sourced fr ..
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BR9010 , 1, 2, and 4k bit EEPROMs for direct connection to serial ports
BR9010 , 1, 2, and 4k bit EEPROMs for direct connection to serial ports
BR9010FV , 1, 2, and 4k bit EEPROMs for direct connection to serial ports
BR9016RFV , 8k, 16k bit EEPROMs for direct connection to serial ports
BR9040F , 1, 2, and 4k bit EEPROMs for direct connection to serial ports
BR9080ARFV-W , 8k, 16k bit EEPROMs for direct connection to serial ports
BF240
NPN Radio Frequency Transistor
BF240 BF240 NPN RF Transistor TO-92 1 1. Collector 2. Emitter 3. Base Absolute Maximum Ratings* T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Emitter Voltage 40 V CEO V Collector-Base Voltage 40 V CBO V Emitter-Base Voltage 4.0 V EBO I Collector Current - Continuous 50 mA C T , T Operating and Storage Junction Temperature Range - 55 ~ 150 °C J STG * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units Off Characteristics V Collector-Emitter Breakdown Voltage * I = 1.0mA, I = 0 40 V (BR)CEO C B V Collector-Base BreakdownVoltage I = 100μA, I = 0 40 V (BR)CBO C E V Emitter-Base Breakdown Voltage I = 10μA, I = 0 4.0 V (BR)EBO E C I Collector Cut-off Current V = 20V, I = 0 100 nA CBO CB E On Characteristics h DC Current Gain I = 1mA, V = 10V 65 225 FE C CE V (sat) Collector-Emitter Saturation Voltage I = 1mA, I = 0.1mA 0.65 V CE C B V (sat) Base-Emitter Saturation Voltage I = 1mA, I = 0.1mA 0.74 V BE C B Small Signal Characteristics f Current gain Bandwidth Product I = 7.0mA, V = 10V, 1100 MHz T C CE f = 100MHz C Common-Emitter Ruerse V = 10V, I = 0, f = 1.0MHz 0.34 pF re CB E Transfer Capacitance * Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0% Thermal Characteristics T =25°C unless otherwise noted A Symbol Parameter Max. Units P Total Device Dissipation 350 mW D Derate above 25°C 2.8 mW/°C R Thermal Resistance, Junction to Case 125 °C/W θJC R Thermal Resistance, Junction to Ambient 357 °C/W θJA ©2003 Rev. A, September 2003
